Related papers: Metal-Insulator oscillations in a Two-dimensional …
In the present paper metal-insulator transition is studied in a generalized Hubbard model with correlated hopping at half-filling and zero temperature. Single-particle Green function and energy spectrum of electron system are calculated.…
We report a remarkable symmetry between the resistivity and conductivity on opposite sides of the B=0 metal-insulator transition in a two-dimensional electron gas in high-mobility silicon MOSFET's. This symmetry implies that the transport…
We have investigated the magnetoresistance of ferromagnet-semiconductor devices in an InAs two-dimensional electron gas system in which the magnetic field has a sinusoidal profile. The magnetoresistance of our device is large. The…
The existence of a metal-insulator transition at zero magnetic field in two- dimensional electron systems has recently been confirmed in high mobility Si-MOSFETs. In this work, the temperature dependence of the resistivity of gated…
We present a model that explains two phenomena, recently observed in high-mobility Si-MOS structures: (i) the strong enhancement of metallic conduction at low temperatures, T<2 K, and (ii) the occurrence of the metal-insulator transition in…
The interplay between strong Coulomb interactions and randomness has been a long-standing problem in condensed matter physics. According to the scaling theory of localization, in two-dimensional systems of noninteracting or weakly…
When high quality bismuth or graphite crystals are placed in a magnetic field directed along the c-axis (trigonal axis for bismuth) and the temperature is lowered, the resistance increases as it does in an insulator but then saturates. We…
The effect of quantizing magnetic field on the electron transport is investigated in a two dimensional topological insulator (2D TI) based on a 8 nm (013) HgTe quantum well (QW). The local resistance behavior is indicative of a…
The low-temperature conductivity of low-density, high-mobility, two-dimensional hole systems in GaAs was studied. We explicitly show that the metal-insulator transition, observed in these systems, is characterized by a well-defined critical…
Recent thermodynamic measurements on two-dimensional (2D) electron systems have found diverging behavior in the magnetic susceptibility and appearance of ferromagnetism with decreasing electron density. The critical densities for these…
The response to a parallel magnetic field of the very dilute insulating two-dimensional system of electrons in silicon MOSFET's is dramatic and similar to that found on the conducting side of the metal-insulator transition: there is a large…
We have observed a metal-insulator transition in an ultra-low density two dimensional hole gas formed in a high quality GaAs-AlGaAs heterostructure at B=0. At the highest carrier density studied ($p_{s}=2.2x10^{10} cm^{-2}, r_{s}=16$) the…
The conductance of a disordered finite-size electron system is calculated by reducing the initial dynamic problem of arbitrary dimensionality to strictly one-dimensional problems for one-particle mode propagators. The metallic ground state…
The thermodynamic potential of an ideal nonrelativistic gas of two-dimensional electrons in crossed uniform magnetic and electric fields is constructed. For low temperatures and very weak electric fields, it is shown that the Hall…
For about twenty years, it has been the prevailing view that there can be no metallic state or metal-insulator transition in two dimensions in zero magnetic field. In the last several years, however, unusual behavior suggestive of such a…
A recent paper on the insulating state of monolayer WTe2 reported the observation of large oscillations in the conductivity that are periodic in 1/B, resembling quantum oscillations in metals. This remarkable observation has inspired…
The in-plane magnetoconductance of the strongly interacting two-dimensional electron system in a silicon MOSFET (metal-oxide-semiconductor-field-effect transistor) exhibits an unmistakeable kink at a well-defined electron density, $n_k$.…
We have studied the zero magnetic field resistivity of unique high- mobility two-dimensional electron system in silicon. At very low electron density (but higher than some sample-dependent critical value, $n_{cr}\sim 10^{11}$ cm$^{-2}$),…
Studies of different experimental groups that explore the properties of a two-dimensional electron gas in silicon semiconductor systems ((100) Si metal-oxide-semiconductor field-effect transistors (MOSFETs) and (100) SiGe/Si/SiGe quantum…
A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well…