Related papers: Metal-Insulator oscillations in a Two-dimensional …
We report the detailed investigation of the magnetic, transport, and magnetocaloric effects of GdSbSe by magnetic susceptibility $\chi(T)$, isothermal magnetization $M(H)$, resistivity $\rho(T, H)$, and heat capacity $C_p(T)$ measurements,…
Experiments on high-quality GaAs (311)A two-dimensional holes at low temperatures reveal a remarkable dependence of the magnetoresistance, measured with an in-plane magnetic field ($B$), on the direction of $B$ relative to both the crystal…
In a recent Letter, Kravchenko et al. [cond-mat/9608101] have provided evidence for a metal-insulator transition (MIT) in a two-dimensional electron system (2DES) in Si metal-oxide-semiconductor field-effect transistors (MOSFETs). The…
We observe the occurrence of an Efros-Shklovskii gap in (Ga,Mn)As based tunnel junctions. The occurrence of the gap is controlled by the extent of the hole wave-function on the Mn acceptor atoms. Using k.p-type calculations we show that…
By carefully analyzing the low temperature density dependence of 2D conductivity in undoped high mobility n-GaAs heterostructures, we conclude that the 2D metal-insulator transition in this system is a density inhomogeneity driven…
$\mathrm{MoS_2}$ is an emergent van der Waals material that shows promising prospects in semiconductor industry and optoelectronic applications. However, its electronic properties are not yet fully understood. In particular, the nature of…
Magnetic oscillations in strongly correlated insulating systems have garnered interest due to oscillations seemingly originating from the bulk, despite an anticipated gapped spectrum. We use the large-$N$ mean-field theory to study the…
We report on study of electrical and structural properties of InSb/GaAs(001) heteroepitaxial layers in [110] and [1-10] crystallographic directions. Strong anisotropy of electron transport parameters measured at a low magnetic field has…
The helical edge states in a quantum spin Hall insulator are presumably protected by time- reversal symmetry. However, even in the presence of magnetic field which breaks time-reversal symmetry, the helical edge conduction can still exist,…
We have conducted an experimental study of the linear transport properties of the magnetic-field induced insulating phase which terminates the quantum Hall (QH) series in two dimensional electron systems. We found that a direct and simple…
We examine the magnetic field driven insulator-quantum Hall-insulator transitions of the two dimensional hole gas in a Ge/SiGe quantum well. We observe direct transitions between low and high magnetic field insulators and the $\nu=1$…
Transport measurements in inverted InAs/GaSb quantum wells reveal a giant spin-orbit splitting of the energy bands close to the hybridization gap. The splitting results from the interplay of electron-hole mixing and spin-orbit coupling, and…
We have measured the low-temperature transport properties of a high-mobility front-gated GaAs/Al_{0.33}Ga_{0.67}As heterostructure. By changing the applied gate voltage, we can vary the amount of disorder within the system. At a Landau…
We investigate transport and Coulomb drag properties of semiconductor-based electron-hole bilayer systems. Our calculations are motivated by recent experiments in undoped electron-hole bilayer structures based on GaAs-AlGaAs gated double…
The magneto-transport properties of planar and layered strongly inhomogeneous two-phase systems are investigated, using the explicit expressions for the effective conductivities and resistivities obtained by the exact dual transformation,…
We present a gating scheme to separate even strong parallel conductance from the magneto-transport signatures and properties of a two-dimensional electron system. By varying the electron density in the parallel conducting layer, we can…
We report on transport experiments through high-mobility gate-tunable undoped InSb QWs. Due to the elimination of any Si modulation doping, the gate-defined two-dimensional electron gases in the quantum wells display a significantly…
We predict two spin-dependent transport phenomena in two-dimensional electron systems, which are induced by spatially fluctuating Rashba spin-orbit interaction. When the electron gas is magnetized, the random Rashba interaction leads to the…
This review first describes the evidence that strongly suggests the existence of the metal-insulator transition (MIT) in a two-dimensional electron system in Si regardless of the amount of disorder. Extensive studies of the charge dynamics…
This paper describes an experimental identification and characterization of a new low temperature transport regime near the quantum Hall-to-insulator transition. In this regime, a wide range of transport data are compactly described by a…