We report on study of electrical and structural properties of InSb/GaAs(001) heteroepitaxial layers in [110] and [1-10] crystallographic directions. Strong anisotropy of electron transport parameters measured at a low magnetic field has been found, whereas the electrical transport through the InSb bulk layer studied by Shubnikov-de Haas oscillations is shown to be independent of the crystallographic directions. The low-field electrical anisotropy of the InSb films appears to be governed by two competitive anisotropic effects: influence of spontaneously formed In nanoclusters inhomogeneously distributed within the InSb layers and conductivity through the near-interface layer with high anisotropic density of extended defects.
@article{arxiv.1307.2368,
title = {Electrical anisotropy of heteroepitaxial InSb/GaAs layers},
author = {T. A. Komissarova and A. N. Semenov and D. A. Kirilenko and B. Ya. Meltser and V. A. Solovyev and A. A. Sitnikova and P. Paturi and S. V. Ivanov},
journal= {arXiv preprint arXiv:1307.2368},
year = {2013}
}