English

Electronic structure and anisotropic transport properties in hexagonal YPtIn and LuAgGe ternary compounds

Materials Science 2009-11-11 v1

Abstract

We present anisotropic, zero applied magnetic field, temperature dependent resistivity measurements on hexagonal, non-magnetic, YPtIn and LuAgGe single crystals. For these materials the in-plane resistivity, ρab\rho_{ab}, is significantly higher than the cc - axis one, ρc\rho_c, with ρab/ρc1.4\rho_{ab}/\rho_c \approx 1.4 for YPtIn and 4.24.7\approx 4.2 - 4.7 for LuAgGe. The connection between the electronic structure and the anisotropic transport properties is discussed using density functional calculations that link the observed anisotropy with a specific shape of Fermi surface and anisotropy of the Fermi velocities.

Keywords

Cite

@article{arxiv.cond-mat/0508346,
  title  = {Electronic structure and anisotropic transport properties in hexagonal YPtIn and LuAgGe ternary compounds},
  author = {G. D. Samolyuk and S. L. Bud'ko and E. Morosan and V. P. Antropov and P. C. Canfield},
  journal= {arXiv preprint arXiv:cond-mat/0508346},
  year   = {2009}
}