ThCr2Si2-type intermetallics are layered conductors in which crystallographic anisotropy and multiband electronic states often give rise to characteristic magnetotransport phenomena. Here, we report the molecular-beam epitaxy growth of LaAg2Ge2 thin films on MgO(001) and their magnetotransport properties. The Hall effect and magnetoresistance are captured by an effective two-carrier description with a high-mobility electron band, yielding a positive magnetoresistance of 22.5% at 9 T. Angle-dependent magnetoresistance exhibits a dominant twofold anisotropy and additional reproducible dip/peak features at characteristic tilt angles that are nearly independent of field and temperature. These results extend our understanding of the anisotropic electronic transport in thin-film germanides within the ThCr2Si2 family.
@article{arxiv.2604.20709,
title = {Anisotropic multiband magnetotransport in LaAg$_2$Ge$_2$ thin films},
author = {Mizuki Ohno and Reiley Dorrian and Veronica Show and Joseph Falson},
journal= {arXiv preprint arXiv:2604.20709},
year = {2026}
}