Magnetization-Switched Metal-Insulator Transition in a (Ga,Mn)As Tunnel Device

K. Pappert; M. J. Schmidt; S. Hümpfner; C. Rüster; G. M. Schott; K. Brunner; C. Gould; G. Schmidt; L. W. Molenkamp

doi:10.1103/PhysRevLett.97.186402

Magnetization-Switched Metal-Insulator Transition in a (Ga,Mn)As Tunnel Device

Strongly Correlated Electrons 2009-11-11 v1

Authors: K. Pappert , M. J. Schmidt , S. Hümpfner , C. Rüster , G. M. Schott , K. Brunner , C. Gould , G. Schmidt , L. W. Molenkamp

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Abstract

We observe the occurrence of an Efros-Shklovskii gap in (Ga,Mn)As based tunnel junctions. The occurrence of the gap is controlled by the extent of the hole wave-function on the Mn acceptor atoms. Using k.p-type calculations we show that this extent depends crucially on the direction of the magnetization in the (Ga,Mn)As (which has two almost equivalent easy axes). This implies one can reversibly tune the system into the insulating or metallic state by changing the magnetization.

Keywords

(Ga,Mn)As tunnel junction Efros-Shklovskii gap metal-insulator transition magnetization switching k.p calculations

Cite

@article{arxiv.cond-mat/0608683,
  title  = {Magnetization-Switched Metal-Insulator Transition in a (Ga,Mn)As Tunnel Device},
  author = {K. Pappert and M. J. Schmidt and S. Hümpfner and C. Rüster and G. M. Schott and K. Brunner and C. Gould and G. Schmidt and L. W. Molenkamp},
  journal= {arXiv preprint arXiv:cond-mat/0608683},
  year   = {2009}
}

Magnetization-Switched Metal-Insulator Transition in a (Ga,Mn)As Tunnel Device

Abstract

Keywords

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