External Control of a Metal-Insulator Transition in GaMnAs Wires
Mesoscale and Nanoscale Physics
2009-11-13 v2 Materials Science
Abstract
Quantum transport in disordered ferromagnetic (III,Mn)V semiconductors is studied theoretically. Mesoscopic wires exhibit an Anderson disorder-induced metal-insulator transition that can be controlled by a weak external magnetic field. This metal-insulator transition should also occur in other materials with large anisotropic magneto resistance effects. The transition can be useful for studies of zero-temperature quantum critical phase transitions and fundamental material properties.
Keywords
Cite
@article{arxiv.0709.3847,
title = {External Control of a Metal-Insulator Transition in GaMnAs Wires},
author = {Anh Kiet Nguyen and Arne Brataas},
journal= {arXiv preprint arXiv:0709.3847},
year = {2009}
}
Comments
Major revised final version