We report on resistivity measurements in La0.67Ca0.33MnO3 and Nd0.7Sr0.3MnO3 thin films in order to elucidate the underlying mechanism for the CMR behavior. The experimental results are analyzed in terms of quantum phase transition ideas to study the nature of the metal-insulator transition in manganese oxides. Resistivity curves as functions of magnetization for various temperatures show the absence of scaling behavior expected in a continuous quantum phase transition, which leads us to conclude that the observed metal-insulator transition is most likely a finite temperature crossover phenomenon.
@article{arxiv.cond-mat/9903238,
title = {Metal-insulator transition in CMR materials},
author = {V. N. Smolyaninova and X. C. Xie and F. C. Zhang and M. Rajeswari and R. L. Greene and S. Das Sarma},
journal= {arXiv preprint arXiv:cond-mat/9903238},
year = {2007}
}
Comments
5 pages REVTeX, 4 figures included, submitted to PRB