Detecting percolative metal-insulator transition in manganites by resistive relaxation

X. J. Chen; H. -U. Habermeier; C. C. Almasan

Detecting percolative metal-insulator transition in manganites by resistive relaxation

Strongly Correlated Electrons 2007-05-23 v1 Materials Science

Authors: X. J. Chen , H. -U. Habermeier , C. C. Almasan

Abstract

We report an experimental study of the time dependence of resistivity of a La $_{0.9}$ Sr $_{0.1}$ MnO $_{3}$ ultrathin film in order to elucidate the underlying mechanism for metal-insulator transition and colossal magnetoresistance CMR effect. There is a clear change of sign in the resistive relaxation rate across the metal-insulator transition driven by temperature or magnetic field. When measuring in increasing temperature or decreasing magnetic field, the resistivity increases with time in the metallic state but decreases with time in the insulating state. These relaxation processes indicate that the metal-insulator transition and the associated CMR are a direct result of phase separation and of percolation of the metallic phase.

Keywords

metal-insulator transition percolative transition resistive relaxation manganites colossal magnetoresistance

Cite

@article{arxiv.cond-mat/0307501,
  title  = {Detecting percolative metal-insulator transition in manganites by resistive relaxation},
  author = {X. J. Chen and H. -U. Habermeier and C. C. Almasan},
  journal= {arXiv preprint arXiv:cond-mat/0307501},
  year   = {2007}
}

Comments

5 pages, 4 figures, submitted to Physical Review B

Related papers

View all related →