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Parallel Magnetic Field Induced Transition in Transport in the Dilute Two-Dimensional Hole System in GaAs

Strongly Correlated Electrons 2009-10-31 v2
Authors: Jongsoo Yoon , C. C. Li , D. Shahar , D. C. Tsui , M. Shayegan
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Abstract

A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well defined transition. The value of resistivity at the transition is found to depend strongly on density.

Keywords

two-dimensional hole system parallel magnetic field metal-insulator transition GaAs/AlGaAs resistivity

Cite

@article{arxiv.cond-mat/9907128,
  title  = {Parallel Magnetic Field Induced Transition in Transport in the Dilute Two-Dimensional Hole System in GaAs},
  author = {Jongsoo Yoon and C. C. Li and D. Shahar and D. C. Tsui and M. Shayegan},
  journal= {arXiv preprint arXiv:cond-mat/9907128},
  year   = {2009}
}

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