Related papers: Re-entrant Layer-by-Layer Etching of GaAs(001)
Grazing-incidence fast atom diffraction (GIFAD) is an exceptionally sensitive method for surface analysis, which can be applied not only at room temperature but also at higher temperatures. In this work we use the He-LiF(001) system as…
A continuous surface wetting transition, pinned to a solid/liquid/liquid/vapor tetra coexistence point, is studied by x-ray reflectivity in liquid Ga-Bi binary alloys. The short-range surface potential is determined from the measured…
The action of a nanoscopic spherically symmetric refractive index profile on a focused Gaussian beam may easily be envisaged as the action of a phase-modifying element, i.e. a lens: Rays traversing the inhomogeneous refractive index field…
Recent developments of the pump-probe thermoreflectance methods (such as the beam-offset and elliptical-beam approaches of the time-domain and frequency-domain thermoreflectance techniques) enabled measurements of the thermal conductivities…
The characteristic of the angular distributions of accelerated Bose-Einstein condensate (BEC) atoms incidence on the surface is designed using the mathematical modeling method. Here, we proposed the idea to study the retroreflection and…
Young's archetypal double-slit experiment forms the basis for modern diffraction techniques: the elastic scattering of waves yields an interference pattern that captures the real-space structure. Here, we report on an inelastic incarnation…
There is a broad interest in enhancing the strength of light-atom interactions to the point where injecting a single photon induces a nonlinear material response. Here, we show theoretically that sub-Doppler-cooled, two-level atoms that are…
Using time- and angle-resolved photoemission, we investigate the ultrafast response of excited electrons in the ternary topological insulator (Bi$_{1 x}$Sb$_{x}$)$_2$Te$_3$ to fs-infrared pulses. We demonstrate that at the critical…
As an ultrawide bandgap semiconductor, beta-Ga2O3 has been attractive for its strong tolerance to irradiation damage and high n-type conductivity through ion implantation. Homoepitaxial (010) \b{eta}-Ga2O3 films grown by MOCVD were…
GaMnAs/GaAs films were grown via molecular beam epitaxy using both low and high substrate temperatures. The films were investigated using Hall effect and photoluminescence (PL) measurements from 8 to 300 K. The carrier concentrations in the…
We studied surface and electronic structures of barium stannate (BaSnO$_3$) thin-film by low energy electron diffraction (LEED), and angle-resolved photoemission spectroscopy (ARPES) techniques.…
Al(110) has been studied for temperatures up to 900 K via ensemble density-functional molecular dynamics. The strong anharmonicity displayed by this surface results in a negative coefficient of thermal expansion, where the first interlayer…
This work continues the development of the raytracing method of [1] for computing the scattered fields from metasurfaces characterized by locally periodic reflection and transmission coefficients. In this work, instead of describing the…
Nanowire lasers can be monolithically and site-selectively integrated onto silicon photonic circuits. To assess their full potential for ultrafast opto-electronic devices, a detailed understanding of their lasing dynamics is crucial.…
Cesium adsorption on 2x4 GaAs (001) was studied by photoemission and low energy electron diffraction. The different Cs induced changes of the As 3d and Ga 3d core level spectra show that charge transfer is almost complete for Ga surface…
We report on the observation of emerging beam resonances, well known as Rayleigh-Wood anomalies and threshold resonances in photon and electron diffraction, respectively, in an atom-optical diffraction experiment. Diffraction of He atom…
This study investigates minority electron diffusion length and carrier recombination phenomena within p-type, 300 nm-thick Ga2O3 epitaxial films. Utilizing Electron Beam-Induced Current (EBIC) and Cathodoluminescence (CL) spectroscopy,…
Ultraviolet nanosecond laser annealing (LA) is a powerful tool where strongly confined heating and melting are desirable. In semiconductor technologies the importance of LA increases with the increasing complexity of the proposed…
We present the first experimental evidence of stimulated Raman re-scattering of a laser in plasma: The scattered light produced by the Raman instability is intense enough to scatter again through the same instability. Although never…
GaAs nanowires and GaAs-Fe3Si core-shell nanowire structures were grown by molecular-beam epitaxy on oxidized Si(111) substrates and characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). Ga droplets were…