Related papers: Re-entrant Layer-by-Layer Etching of GaAs(001)
We present a detailed theoretical investigation on the radiation induced giant magnetoresistance oscillations recently discovered in high-mobility two-dimensional electron gas. Electron interactions with impurities, transverse and…
Rare-earth based lasing action in GaN semiconductor at the telecommunication wavelength of 1.5 micron has been demonstrated at room temperature. We have reported the stimulated emission under the above bandgap excitation from Er doped GaN…
We report on the temperature dependence of the dielectric tensor elements of $n$-type conductive $\beta$-Ga$_2$O$_3$ from 22$^\circ$C-500$^\circ$C in the spectral range of 1.5~eV--6.4~eV. We present the temperature dependence of the…
In the present work we introduce a generalized lattice-gas model to study the multilayer adsorption of interacting polyatomics on heterogeneous surfaces. Using an approximation in the spirit of the well-known Brunauer--Emmet--Teller (BET)…
Probing optical excitations with high resolution is important for understanding their dynamics and controlling their interaction with other photonic elements. This can be done using state-of-the-art electron microscopes, which provide the…
GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated multilayer GeAs nanoflakes are structurally characterized and…
High quality electron beams, with high spatial and tempo- ral resolution, have an important use in electron diffraction experiments to probe and study the constituents of matter. A cold electron source is being developed based on elec- tron…
AlN thin films have been grown on Si (100) substrates by reactive ion beam sputter deposition (IBSD) at different substrate temperatures varying from room temperature (RT) to 500oC. Substrate temperature induced microstructural transition…
Capitalizing on the directed nature of the atomic fluxes in molecular beam epitaxy, we propose and demonstrate the sequential directional deposition of lateral (In,Ga)N shells on GaN nanowires. In this approach, a sub-monolayer thickness of…
3D Gaussian Splatting (3DGS) has demonstrated impressive capabilities in novel view synthesis. However, rendering reflective objects remains a significant challenge, particularly in inverse rendering and relighting. We introduce RTR-GS, a…
Time-dependent and constituent-specific spectral changes in soft near edge X-ray spectroscopy (XAS) of an [Fe/MgO]$_8$ metal/insulator heterostructure upon laser excitation are analyzed at the O K-edge with picosecond time resolution. The…
We investigate, theoretically and experimentally, the transmission of light through a thermal vapour of three-level ladder-type atoms, in the presence of 2 counter-propagating control fields. A simple theoretical model predicts the presence…
Full size single-sided GaAs microstrip detectors with integrated coupling capacitors and bias resistors have been fabricated on 3'' substrate wafers. PECVD deposited SiO_2 and SiO_2/Si_3N_4 layers were used to provide coupling capacitaces…
We demonstrate that absorption saturation of a mid-infrared intersubband transition can be engineered to occur at moderate light intensities of the order of 10-20 kW$.$cm$^{-2}$ and at room temperature. The structure consists of an array of…
The electron reflection amplitude $R$ at stacking-fault (SF) induced fractional steps is determined for Ag(111) surface states using a low temperature scanning tunneling microscope. Unexpectedly, $R$ remains as high as $0.6 \sim 0.8$ as…
The electronic and optical properties of the cleavage InAs(110) surface are studied using a semi-empirical tight-binding method which employs an extended atomic-like basis set. We describe and discuss the electronic character of the surface…
The angular distribution of the intensity in photoemission experiments is affected by electron diffraction patterns and by a smoothly varying ISO contribution originated by both intrumental details and physical properties of the samples.…
The method of software analysis of high-resolution TEM images using the peak pairs algorithm in combination with Raman spectroscopy was employed to study lattice deformations in Ge/Si(001) structures with low-temperature Ge quantum dots. It…
The Mott insulating phase of a one-dimensional bosonic gas trapped in optical lattices is described by a Bose-Hubbard model. A continuous unitary transformation is used to map this model onto an effective model conserving the number of…
We report the observation of the resonant excitation of edge photocurrents in bilayer graphene subjected to terahertz radiation and a magnetic field. The resonantly excited edge photocurrent is observed for both inter-band (at low carrier…