Related papers: Re-entrant Layer-by-Layer Etching of GaAs(001)
Elastic eta-d scattering is considered within the Alt-Grassberger-Sandhas (AGS) formalism for various eta-N input data. A three-body resonant state is found close to the eta-d threshold. This resonance is sustained for different choices of…
The perturbations in the electron number density during recombination contributes to the Cosmic Microwave Background bispectrum through second order terms. Perturbations in the electron density can be a factor of ~5 larger than the baryon…
A Bayesian model to infer edge electron density profiles is developed for the JET lithium beam emission spectroscopy system, measuring Li I line radiation using 26 channels with ~1 cm spatial resolution and 10~20 ms temporal resolution. The…
Electron tomography (ET) offers nanoscale 3D characterization of mesoporous materials but is often limited by their low scattering contrast. Here, we introduce a gallium (Ga) intrusion strategy for mesoporous silica that dramatically…
We present Bidirectional Gaussian Primitives, an image-based novel view synthesis technique designed to represent and render 3D objects with surface and volumetric materials under dynamic illumination. Our approach integrates light…
3D Gaussian splatting has experienced explosive popularity in the past few years in the field of novel view synthesis. The lightweight and differentiable representation of the radiance field using the Gaussian enables rapid and high-quality…
AlGaAs/GaAs coatings are being considered as coating candidates for gravitational-wave detectors. In this paper we investigate the birefringence properties of this crystalline semiconductor material by modulating the optical illumination on…
We observe high-resolution diffraction patterns of a thermal-energy helium-atom beam reflected from a microstructured surface grating at grazing incidence. The grating consists of 10-$\mu$m-wide Cr strips patterned on a quartz substrate and…
This study presents a demonstration of the surface morphology behavior of gallium antimonide (GaSb) layers deposited on gallium arsenide (GaAs) (100) substrates using three different methods: metamorphic, interfacial misfit (IMF) matrix,…
The authors report in situ Auger electron spectroscopy (AES) of the surfaces of complex oxides thin films grown by pulsed laser deposition (PLD). The authors demonstrate the utility of the technique in studying chemical composition by…
An uncommon double-ray scenario of light resonant scattering by a periodic metasurface is proposed to provide strong non-specular reflection. The metasurface is constracted as an array of silicon nanodisks placed on thin silica-on-metal…
Periodic modulations that appear in the low-temperature transient reflectivity signal of a GaAsP/AlGaAs single quantum well is studied. Similar anomalous oscillations are also observed in layered manganite [K. Kouyama et.al. J. Phys. Soc.…
We observe near 100 % absorption of light in intense ultrashort laser plasma interaction in a metal coated (Au on glass) sub-lambda grating structure under suitable conditions and the subsequent 'hot' electron generation from the grating…
The interest in using the radiation detectors based on high resistive chromium-compensated GaAs (GaAs:Cr) in high energy physics and others applied fields has been growing steadily due to its numerous advantages over others classical…
In this Letter, we report on the concept and analysis of a low-emittance electron storage ring, in which the electron beams undergo an early-stage self-amplified spontaneous emission lasing process on a turn-by-turn basis. The lasing…
We report a study of structural and electronic properties of a germanium layer on Al(111) using scanning tunneling microscopy (STM), low energy electron diffraction and core-level photoelectron spectroscopy. Experimental results show that a…
Transient absorption spectroscopy is routinely used to study the electron dynamics in plasmonic gold nanoparticles. Typically, the transient absorption bleach is analyzed as measure for the electron temperature. However, the implicitly…
We measure transport through a Ga[Al]As heterostructure at temperatures between 0.1 K and 30 K. Increasing the temperature enhances the electron-electron scattering rate and viscous effects in the two-dimensional electron gas arise. To…
Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconductor (CMOS) technology. Persistent efforts continue to achieve…
The standard model of Gamma-Ray Bursts afterglows is based on synchrotron radiation from a blast wave produced when the relativistic ejecta encounters the surrounding medium. We reanalyze the refreshed shock scenario, in which slower…