Related papers: Re-entrant Layer-by-Layer Etching of GaAs(001)
We studied the resonant diffraction signal from stepped surfaces of SrTiO3 at the Ti 2p -> 3d (L2,3) resonance in comparison with x-ray absorption (XAS) and specular reflectivity data. The steps on the surface form an artificial…
Ultrawide bandgap semiconductor $\beta$-Ga2O3 holds extensive potential for applications in high-radiation environments. One of the primary challenges in its practical application is unveiling the mechanisms of surface irradiation damage…
The reentrant layering transitions found in rare gas adsorption on solid substrates have conflictually been explained either in terms of preroughening (PR), or of top layer melting-solidification phenomena. We obtain adsorption isotherms of…
Using a combination of ultraviolet-vacuum ultraviolet reflectivity and spectroscopic ellipsometry, we observe a resonant exciton at an unusually high energy of 6.3eV in epitaxial graphene. Surprisingly, the resonant exciton occurs at room…
Attosecond dynamics of electron reflection from a thin film is studied based on a one-dimensional jellium model. Following the Eisenbud-Wigner-Smith concept, the reflection time delay $\Delta\tau_{\rm R}$ is calculated as the energy…
GeSn epitaxial heterostructures are emerging as prominent candidates for the monolithic integration of light sources on Si substrates. Here we propose a judicious explanation for their temperature-dependent photoluminescence (PL) that is…
Using high quality undoped GaAs/AlGaAs heterostructures with optically patterned insulation between two layers of gates, it is possible to investigate very low density mesoscopic regions where the number of impurities is well quantified.…
A novel class of circular resonators, based on a radial defect surrounded by Bragg reflectors, is studied in detail. Simple rules for the design and analysis of such structures are derived using a transfer matrix formalism. Unlike…
We demonstrate selective area epitaxy of GaAs films using patterned graphene masks on a Ge (001) substrate. The GaAs selectively grows on exposed regions of the Ge substrate, for graphene spacings as large as 10 microns. The selectivity is…
We propose a new approach to characterizing the depths of optical lattices, in which an atomic gas is given a finite initial momentum, which leads to high amplitude oscillations in the zeroth diffraction order which are robust to…
We demonstrate nanohole formation in AlGaSb by Ga droplet etching within a temperature range from 270{\deg}C to 500{\deg}C, allowing a wide range of tunability of the nanohole density. By leveraging the low vapor pressure of Sb, we can…
A new phase is detected within 100micrometers of 24 DEG ab grain boundary (GB) in YBa2Cu3O7-d 50 nm films on SrTiO3 by enhanced (001) anomalous scattering. Site identification and temperature dependence is interpreted using crystallographic…
In this work we consider the inverse problem of reconstructing the optical properties of a layered medium from an elastography measurement where optical coherence tomography is used as the imaging method. We hereby model the sample as a…
Our paper presents a non-destructive thermal transient measurement method that is able to reveal differences even in the micron size range of MEMS structures. Devices of the same design can have differences in their sacrificial layers as…
The surface structure of Bi(110) has been investigated by low-energy electron diffraction (LEED) intensity analysis and by first-principles calculations. Diffraction patterns at a sample temperature of 110 K and normal incidence reveal a…
The increasing availability of high-power Yb-based ultrafast laser-amplifier systems has opened the possibility of air filamentation at high repetition rates >1 kHz. In this new regime, accumulation effects cannot be ruled out, therefore,…
We propose, based on ab initio calculations, that the ground state (001) surface of $\alpha$-Ga should be covered by two layers of GaIII, a denser phase which is stable in the bulk only at high pressure and temperature. We discuss how this…
The results of diffuse neutron scattering experiment on PbMg1/3Nb2/3O3 single crystal above the Burns temperature are reported. It is shown that the high temperature elastic diffuse component is highly anisotropic in low-symmetry Brillouin…
Thermal energy atom scattering at a surface with grazing incidence conditions is an innovative method for investigating dispersive atom-surface interactions with potential application in quantum sensing interferometry. The complete…
Pulsed Laser Deposition in molecular-beam epitaxy environment (Laser-MBE) has been used to grow high quality BaCuOx/CaCuO2 superlattices. In situ Reflection High Energy Electron Diffraction (RHEED) shows that the growth mechanism is…