Low Temperature Transport in Undoped Mesoscopic Structures

S. Sarkozy; K. Das Gupta; C. Siegert; A. Ghosh; M. Pepper; I. Farrer; H. E. Beere; D. A. Ritchie; G. A. C. Jones

doi:10.1063/1.3097806

Low Temperature Transport in Undoped Mesoscopic Structures

Mesoscale and Nanoscale Physics 2015-05-13 v1

Authors: S. Sarkozy , K. Das Gupta , C. Siegert , A. Ghosh , M. Pepper , I. Farrer , H. E. Beere , D. A. Ritchie , G. A. C. Jones

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Abstract

Using high quality undoped GaAs/AlGaAs heterostructures with optically patterned insulation between two layers of gates, it is possible to investigate very low density mesoscopic regions where the number of impurities is well quantified. Signature appearances of the scattering length scale arise in confined two dimensional regions, where the zero-bias anomaly (ZBA) is also observed. These results explicitly outline the molecular beam epitaxy growth parameters necessary to obtain ultra low density large two dimensional regions as well as clean reproducible mesoscopic devices.

Keywords

semiconductor nanowire growth surface science charge carrier mobility

Cite

@article{arxiv.0807.2778,
  title  = {Low Temperature Transport in Undoped Mesoscopic Structures},
  author = {S. Sarkozy and K. Das Gupta and C. Siegert and A. Ghosh and M. Pepper and I. Farrer and H. E. Beere and D. A. Ritchie and G. A. C. Jones},
  journal= {arXiv preprint arXiv:0807.2778},
  year   = {2015}
}

Comments

4 pages, 4 EPS figs

Low Temperature Transport in Undoped Mesoscopic Structures

Abstract

Keywords

Cite

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