Related papers: Re-entrant Layer-by-Layer Etching of GaAs(001)
The effects of ion beam induced atomic mixing and subsequent thermal treatment in Si/C multilayer structures are investigated by use of the technique of grazing incidence X-ray diffraction (GIXRD) and Raman spectroscopy. The [Si (3.0 nm) /…
We use first-principles calculations based on many-body perturbation theory to investigate the near-edge electronic and optical properties of \b{eta}-Ga2O3. The fundamental band gap is indirect, but the minimum direct gap is only 29 meV…
We have investigated InGaAs layers grown by molecular-beam epitaxy on GaAs(001) by transmission electron microscopy (TEM) and photoluminescence spectroscopy. InGaAs layers with In-concentrations of 16, 25 and 28 % and respective thicknesses…
We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature. The expected increase in the density with decreasing temperature, indeed, is…
We investigate the variation of the oscillation frequency of the Mg$^{2+}$ and O$^{2-}$ ions in the magnesium oxide lattice due to the interactions of the surface with water monolayers by means of Low Energy Electron Diffraction. Our key…
The Ge(001)-(2 1 0 3)-Pb surface reconstruction with a lead coverage of 5/3 monolayer is on the borderline between the low-coverage covalently-bonded and high-coverage metallic lead overlayers. This gives rise to an unusual low-temperature…
Shear localization in granular materials is studied experimentally and numerically. The system consists of two material layers with different effective frictions. The presence of the material interface leads to a special type of "total…
The advent of neural and Gaussian-based radiance field methods have achieved great success in the field of novel view synthesis. However, specular reflection remains non-trivial, as the high frequency radiance field is notoriously difficult…
Results of a first-principles study of the Li impurity in GaN are presented. We find Li is a channel interstitial, with an onset for diffusion at T$\sim$ 600 K. Above this temperature, Li can transform to a Ga-substitutional acceptor by…
Laser melting of semiconductors has been observed for almost 40 years; surprisingly, it is not well understood where most theoretical simulations show a laser-induced thermal process. $\textit{Ab initio}$ nonadiabatic simulations based on…
Using a custom-built scanning system, we generated maps of birefringence on reflection at $\lambda=1064$~nm from single-crystal GaAs/Al$_{0.92}$Ga$_{0.08}$As Bragg reflectors (henceforth ``AlGaAs coatings''). Ten coatings were bonded to…
In the relentless pursuit of advancing semiconductor technologies, the demand for atomic layer processes has given rise to innovative processes, which have already played a significant role in the continued miniaturization features. Among…
The study of the relaxation mechanism of amorphous germanium after femtosecond laser irradiation is presented in this work. In particular, a thin germanium coating was deposited onto a glass substrate through the electron beam vacuum…
Convenient variational formula for collective diffusion of many particles adsorbed at lattices of arbitrary geometry is formulated. The approach allows to find the expressions for the diffusion coefficient for any value of the system's…
We provide a first-principles modeling of the beta-Ga2O3/3C-SiC interface that takes into account the reconstructions occurring at the 3C-SiC (001) surface by oxidation, aiming to mimic the actual deposition process under the best…
The surface of an insulating material irradiated by a beam of low energy electrons charges positively if the yield of secondary electron is greater than unity. For such a dynamical equilibrium, the thermodynamic properties have been…
We report on the low-temperature fabrication (300$\deg$C) of ultrathin 2D amorphous carbon layers on III-V semiconductors by plasma-enhanced chemical vapor deposition as a universal template for remote epitaxy. We present growth and…
By using Laplace's method for double integrals and the so-called beam condition obeyed by a partially coherent beamlike light field, we report the equivalence theory (ET) of partially coherent beams on scattering for the first time. We…
Two kinds of electroconvection (EC) patterns in an ether-bridged bent-core nematic liquid crystal material (BCN), which appear in different frequency ranges, are examined and compared in this paper. One is a longitudinal pattern with the…
Oscillatory density profiles (layers) have previously been observed at the free surfaces of liquid metals, but not in other isotropic liquids. We have used x-ray reflectivity to study a molecular liquid, tetrakis(2-ethylhexoxy)silane. When…