English

AC-coupled GaAs microstrip detectors with a new type of integrated bias resistors

Instrumentation and Detectors 2009-10-30 v1

Abstract

Full size single-sided GaAs microstrip detectors with integrated coupling capacitors and bias resistors have been fabricated on 3'' substrate wafers. PECVD deposited SiO_2 and SiO_2/Si_3N_4 layers were used to provide coupling capacitaces of 32.5 pF/cm and 61.6 pF/cm, respectively. The resistors are made of sputtered CERMET using simple lift of technique. The sheet resistivity of 78 kOhm/sq. and the thermal coefficient of resistance of less than 4x10^-3 / degree C satisfy the demands of small area biasing resistors, working on a wide temperature range.

Keywords

Cite

@article{arxiv.physics/9709041,
  title  = {AC-coupled GaAs microstrip detectors with a new type of integrated bias resistors},
  author = {R. Irsigler and R. Geppert and R. Goeppert and M. Hornung and J. Ludwig and M. Rogalla and K. Runge and Th. Schmid and A. Soldner-Rembold and M. Webel and C. Weber},
  journal= {arXiv preprint arXiv:physics/9709041},
  year   = {2009}
}

Comments

20 pages, 9 figures, to be published in NIM A