We report on the design, production, and testing of advanced double-sided silicon strip detectors under development at the Max-Planck-Institute as part of the Medium Energy Gamma-ray Astronomy (MEGA) project. The detectors are designed to form a stack, the "tracker," with the goal of recording the paths of energetic electrons produced by Compton-scatter and pair-production interactions. Each layer of the tracker is composed of a 3 x 3 array of 500 micron thick silicon wafers, each 6 cm x 6 cm and fitted with 128 orthogonal p and n strips on opposite sides (470 micron pitch). The strips are biased using the punch-through principle and AC-coupled via metal strips separated from the strip implant by an insulating oxide/nitride layer. The strips from adjacent wafers in the 3 x 3 array are wire-bonded in series and read out by 128-channel TA1.1 ASICs, creating a total 19 cm x 19 cm position-sensitive area. At 20 degrees C a typical energy resolution of 15-20 keV FWHM, a position resolution of 290 microns, and a time resolution of ~1 microsec is observed.
@article{arxiv.astro-ph/0302500,
title = {Development of Silicon Strip Detectors for a Medium Energy Gamma-ray Telescope},
author = {P. F. Bloser and F. Schopper and R. Andritschke and G. Kanbach and A. Zoglauer and P. Lechner},
journal= {arXiv preprint arXiv:astro-ph/0302500},
year = {2009}
}
Comments
9 pages, 13 figures, to appear in NIM-A (Proceedings of the 9th European Symposium on Semiconductor Detectors)