A Semiconductor Multiple-Compton Telescope (SMCT) is being developed to explore the gamma-ray universe in an energy band 0.1--20 MeV, which is not well covered by the present or near-future gamma-ray telescopes. The key feature of the SMCT is the high energy resolution that is crucial for high angular resolution and high background rejection capability. We have developed prototype modules for a low noise Double-sided Silicon Strip Detector (DSSD) system which is an essential element of the SMCT. The geometry of the DSSD is optimized to achieve the lowest noise possible. A new front-end VLSI device optimized for low noise operation is also developed. We report on the design and test results of the prototype system. We have reached an energy resolution of 1.3 keV (FWHM) for 60 keV and 122 keV at 0 degree C.
@article{arxiv.astro-ph/0212053,
title = {Low Noise Double-Sided Silicon Strip Detector for Multiple-Compton Gamma-ray Telescope},
author = {H. Tajima and T. Kamae and S. Uno and T. Nakamoto and Y. Fukazawa and T. Mitani and T. Takahashi and K. Nakazawa and Y. Oakada and M. Nomachi},
journal= {arXiv preprint arXiv:astro-ph/0212053},
year = {2009}
}
Comments
10 pages, 13 figures, SPIE style file, Contributed to Astronomical Telescopes and Instrumentation, Waikoloa, Hawaii USA, August 22--August 28, 2002 (SPIE Conference Proceedings vol. 4851)