Related papers: Re-entrant Layer-by-Layer Etching of GaAs(001)
We report the isotropic plasma atomic layer etching (ALE) of aluminum nitride using sequential exposures of SF$_6$ plasma and trimethylaluminum (Al(CH$_3$)$_3$, TMA). ALE was observed at temperatures greater than 200 $^\circ$C, with a…
We present detailed experimental studies of the temperature dependence of the plateau conductance of GaAs quantum point contacts in the temperature range from 0.3 K to 10 K. Due to a strong lateral confinement produced by a shallow-etching…
The numerical analysis of elastic wave propagation in unbounded media may be difficult to handle due to spurious waves reflected at the model artificial boundaries. Several sophisticated techniques such as nonreflecting boundary conditions,…
We calculate the location of the quantum phase transitions of a bose gas trapped in an optical lattice as a function of effective scattering length $a_{\eff}$ and temperature $T$. Knowledge of recent high-loop results on the shift of the…
We report on the observation of complex nonlinear intensity dependence of the circular and linear photogalvanic currents induced by infrared radiation in compensated (Bi$_{0.3}$Sb$_{0.7}$)$_2$(Te$_{0.1}$Se$_{0.9}$)$_3$ 3D topological…
Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffraction. A growth mode map was established as a function of Ga/N…
X-ray reflectivity measurements of the binary liquid Ga-Bi alloy reveal a dramatically different surface structure above and below the monotectic temperature $T_{mono}=222^{\circ}$ C. A Gibbs-adsorbed Bi monolayer resides at the surface at…
Design and reconstruction of 2d and 3d photonic structures are usually carried out by forward simulations combined with optimization or intuition. Reconstruction by means of layer-stripping has been applied in seismic processing as well as…
Extremely asymmetrical scattering (EAS) is an unusual type of Bragg scattering in slanted periodic gratings with the scattered wave (the +1 diffracted order) propagating parallel to the grating boundaries. Here, a unique and strong…
500-nm-thick $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with $x=$ 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a comprehensive analysis involving x-ray diffraction,…
X-ray refraction and absorption by neon atoms under the influence of an 800 nm laser with an intensity of 10^13 W/cm^2 is investigated. For this purpose, we use an ab initio theory suitable for optical strong-field problems. Its results are…
A method to fabricate GaAs microcavities using only a soft mask with an electrolithographic pattern in an inductively coupled plasma etching is presented. A careful characterization of the fabrication process pinpointing the main routes for…
The role of absorption in 3D electron diffraction is established through analytical theory, simulation, and dynamical refinement. A two-beam expression for the absorbed integrated intensity is derived, showing that for $t/\xi_g \ll 1$…
Two aspects of the contribution of grazing incidence fast atom diffraction (GIFAD) to molecular beam epitaxy (MBE) are reviewed here: the ability of GIFAD to provide \emph{in-situ} a precise description of the atomic-scale surface topology,…
The reconstructions of the InP(001) surface prepared by molecular beam epitaxy have been studied with in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). The growth chamber contains a highly…
We present coherent speckled x-ray diffraction patterns obtained from a monolayer of surface atoms. We measured both the specular anti-Bragg reflection and the off-specular hexagonal reconstruction peak for the Au (0 0 1) surface…
The linearized problem of plasma oscillations in layer (particularly, in thin films) in external longitudinal alternating electric field is solved analytically. Specular - accommodative boundary conditions of electron reflection from the…
A novel approach has been developed to calculate the temperature dependence of the optical response of a semiconductor. The dielectric function is averaged over several thermally perturbed configurations that are extracted from molecular…
A recently developed so-called explicit algebraic Reynolds-stress (EARS) model is applied to a transitioning atmospheric boundary layer (ABL). The simulation describes a diurnal cycle with a deep convective ABL during daytime and an…
We have performed coherent x-ray scattering experiments on the hexagonally reconstructed Pt (001) surface to study the temperature-dependent surface dynamics. By correlating speckle patterns collected at the (001) anti-Bragg position we are…