Related papers: Re-entrant Layer-by-Layer Etching of GaAs(001)
The present work aims at investigating the defect accumulation and recovery dynamics in the inherently anisotropic $\beta$-Ga$_2$O$_3$ lattice. A systematic Rutherford Backscattering Spectrometry in Channelling mode (RBS/C) analysis of…
The direct growth of III-V semiconductors on silicon holds tremendous potential for photonics applications. However, the inherent differences in their properties lead to defects in the epitaxial layer, including threading dislocations…
The delivery of an elemental cation flux to the substrate surface in the oxide molecular beam epitaxy (MBE) chamber has been utilized not only for the epitaxial growth of oxide thin films in the presence of oxygen but also in the absence of…
The temperature evolution of the resonant Raman scattering from high-quality bilayer 2H-MoS$_{2}$ encapsulated in hexagonal BN flakes is presented. The observed resonant Raman scattering spectrum as initiated by the laser energy of 1.96 eV,…
Quantum reflection of thermal He atoms from various surfaces (glass slide, GaAs wafer, flat and structured Cr) at grazing conditions is studied within the elastic close-coupling formalism. Comparison with the experimental results of B.S.…
For InAs/GaAs(001) quantum dot (QD) system, the wetting layer (WL) evolution and its temperature dependence were studied using reflectance difference spectroscopy (RDS) and analyzed with a rate equation model. The WL thicknesses showed a…
We present a systematic investigation of Ga adsorption and desorption kinetics on the wurtzite GaN(0001) surface using four in situ techniques operated simultaneously: reflection high-energy electron diffraction, laser reflectometry,…
Self-organized pattern formation by the process of reverse epitaxial growth has been investigated on GaAs (001) surfaces during 1 keV Ar+ bombardment at target temperature of 450 degC for a wide range of incident angles. Highly ordered…
Optical beams propagating through air acquire phase distortions from turbulent fluctuations in the refractive index. While these distortions are usually deleterious to propagation, beams reflected in a turbulent medium can undergo a local…
We studied and optimized the molecular beam epitaxy of GaSb layers on vicinal (001) Si substrates using a GaAs nucleation layer. An in-depth analysis of the different growth stages under optimized conditions revealed the formation of a high…
GaAs-(111)-nanostructures exhibiting second harmonic generation are new building blocks in nonlinear optics. Such structures can be fabricated through epitaxial lift-off employing selective etching of Al-containing layers and subsequent…
This work demonstrates a novel in situ etching technique for $\beta$-Ga$_2$O$_3$ using solid-source metallic Ga in a LPCVD system, enabling clean, anisotropic, plasma damage-free etching. Etching behavior was systematically studied on…
Direct observation of capture cross-section is challenging due to the need of extremely short filling pulses in the two-gate Deep-Level Transient Spectroscopy (DLTS). Simple estimation of cross-section can be done from DLTS and Admittance…
Electron injection from the tip of a scanning tunneling microscope into a p-type GaAs(110) surface have been used to induce luminescence in the bulk. Atomically-resolved photon maps revealed significant reduction of luminescence intensity…
We report the evolution of charge density wave states under pressure for two NbS3 phases triclinic (phase I) and monoclinic (phase II) at room temperature. Raman and X-ray diffraction (XRD) techniques are applied. The x-ray studies on the…
Due to the real-time rendering performance, 3D Gaussian Splatting (3DGS) has emerged as the leading method for radiance field reconstruction. However, its reliance on spherical harmonics for color encoding inherently limits its ability to…
Gallium oxide (Ga2O3) can be crystallized in several polymorphs exhibiting different physical properties. In this work, polymorphic structures consisting of the cubic defective spinel (gamma) film on the top of the monoclinic (beta)…
The influence of the growth conditions as well as the device design on the device performance of (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well lasers is investigated. To this purpose, the epitaxy process is scaled to full two inch substrates…
Re-using the substrate is identified as a method for reducing the cost of high efficiency III-V solar cells. The approach investigated here consists in inserting a graphene layer onto a (001)GaAs substrate prior to the epitaxial growth of…
Radiation-induced crystal lattice damage and its recovery in wide bandgap oxides, in particular beta-gallium oxide (beta-Ga2O3), is a complex process. This paper presents the first study on the process of the defects accumulation in…