Wetting layer evolution and its temperature dependence during self assembly of InAs/GaAs quantum dots

Hongyi Zhang; Yonghai Chen; Guanyu Zhou; Chenguang Tang; Zhanguo Wang

doi:10.1186/1556-276X-7-600

Wetting layer evolution and its temperature dependence during self assembly of InAs/GaAs quantum dots

Mesoscale and Nanoscale Physics 2012-11-14 v1

Authors: Hongyi Zhang , Yonghai Chen , Guanyu Zhou , Chenguang Tang , Zhanguo Wang

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Abstract

For InAs/GaAs(001) quantum dot (QD) system, the wetting layer (WL) evolution and its temperature dependence were studied using reflectance difference spectroscopy (RDS) and analyzed with a rate equation model. The WL thicknesses showed a monotonic increase at relatively low growth temperatures but a first increase and then decrease at higher temperatures, which were unexpected from the thermodynamic understanding. By adopting a rate equation model, the temperature dependence of QD growth was assigned as the origin of different WL evolutions. A brief discussion on the indium desorption was also given. Those results gave hints of the kinetic aspects of QD self-assembly.

Keywords

wetting layer InAs/GaAs quantum dots self-assembly reflectance difference spectroscopy rate equation model temperature dependence indium desorption

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@article{arxiv.1205.0408,
  title  = {Wetting layer evolution and its temperature dependence during self assembly of InAs/GaAs quantum dots},
  author = {Hongyi Zhang and Yonghai Chen and Guanyu Zhou and Chenguang Tang and Zhanguo Wang},
  journal= {arXiv preprint arXiv:1205.0408},
  year   = {2012}
}

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13 pages, 3 figures

Wetting layer evolution and its temperature dependence during self assembly of InAs/GaAs quantum dots

Abstract

Keywords

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