Related papers: Transit-Time Spin Field-Effect-Transistor
A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied voltage determines the final spin…
A magnetic-field-effect transistor is proposed that generates a spin-polarized current and exhibits a giant negative magnetoresitance. The device consists of a nonmagnetic conducting channel (wire or strip) wrapped, or sandwiched, by a…
A proposal of electrically controlled spin transistor in helical magnetic field is presented. In the proposed device, the transistor action is driven by the Landau-Zener transitions that lead to a backscattering of spin polarized electrons…
Spin transfer torque in magnetic structures occurs when the transverse component of the spin current that flows from the nonmagnetic medium to ferromagnetic medium are absorbed by the interface. In this paper, considering the Rashba effect…
We calculate the current-voltage characteristic of a one-dimensional band insulator with magnetic field and Rashba spin-orbit coupling which is connected to nonmagnetic leads. Without spin-orbit coupling we find a complete spin-filtering…
We investigate the electron transport through a two-dimensional semiconductor with a nonuniform Rashba spin-orbit interaction. Due to the combination of the coherence effect and the Rashba interaction, a spontaneous spin-polarized current…
The spin field effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field…
We present the first spintronic semiconductor field effect transistor. The injector and collector contacts of this device were made from magnetic permalloy thin films with different coercive fields so that they could be magnetized either…
We demonstrate how the Rashba spin-orbit coupling in semiconductor heterostructures can produce and control a spin-polarized current without ferromagnetic leads. Key idea is to use spin-double refraction of an electronic beam with a nonzero…
We propose a current-in-plane spin-valve field-effect transistor (CIP-SV-FET), which is composed of a ferromagnet / nonferromagnet / ferromagnet trilayer structure and a gate electrode. This is a promising device alternative to spin…
Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies. We have brought the two directions together to…
We propose and theoretically analyze a novel metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and half-metallic-ferromagnet (HMF)…
A theory of spin-transport in hybrid normal metal - ferromagnetic electronic circuits is developed, taking into account non-collinear spin-accumulation. Spin-transport through resistive elements is described by 4 conductance parameters.…
A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of…
We consider the effect of the Rashba spin-orbital interaction and space charge in a ferromagnet-insulator/semiconductor/insulator-ferromagnet junction where the spin current is severely affected by the doping, band structure and charge…
The conductance modulations in spin field-effect transistors under finite bias voltages were studied. It was shown that when a finite bias voltage is applied between two terminals of a spin field-effect transistor, the spin precession…
We propose a new type of the spin Seebeck effect (SSE) emerging from the Rashba spin-orbit coupling in asymmetric four-terminal electron systems. This system generates spin currents or spin voltages along the longitudinal direction parallel…
We consider spin polarized transport in a ferromagnet-insulator/semiconductor/insulator-ferromagnet (F1-I-S-I-F2) junction. We find that the spin current is strongly dependent on the spin configurations, the doping and space charge…
We discuss the transport properties of a quantum spin-Hall insulator with sizable Rashba spin-orbit coupling in a disk geometry. The presence of topologically protected helical edge states allows for the control and manipulation of spin…
Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high…