Related papers: Nanometer-Scale Materials Contrast Imaging with a …
Optical reflectivity contrast provides a simple, fast and noninvasive method for characterization of few monolayer samples of two-dimensional materials. Here we apply this technique to measure the thickness of thin flakes of hexagonal Boron…
Hydrogen resist lithography using the tip of a scanning tunneling microscope (STM) is employed for patterning p-type nanostructures in silicon. For this, the carrier density and mobility of boron $\delta$-layers, fabricated by gas-phase…
We describe quantitative imaging of the sheet resistance of metallic thin films by monitoring frequency shift and quality factor in a resonant scanning near-field microwave microscope. This technique allows fast acquisition of images at…
We present the results of a study of lightly doped amorphous silicon used as a resistive medium for high-radiopurity resistors in nuclear and particle physics research instrumentation. Prototypes are produced for a Time Projection Chamber…
Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor…
Direct orientation contrast imaging of zinc-blende III-V materials is studied using scanning electron microscopy. A quantitative approach is taken using a 3 {\mu}m thick orientation-patterned GaP grown on GaAs sample, studying the…
We show that the optical and electronic properties of nanocrystalline silicon can be efficiently tuned using impurity doping. In particular, we give evidence, by means of ab-initio calculations, that by properly controlling the doping with…
Boron-doped multi-walled carbon nanotubes (MWNTs) were synthesized using a methanol solution of boric acid as a source material. Accurate measurements of the electrical resistivity of an individual boron-doped MWNT was performed with a…
The doping of graphene to tune its electronic structure is essential for its further use in carbon based electronics. Adapting strategies from classical silicon based semiconductor technology, we use the incorporation of heteroatoms in the…
A simple optical method is presented for identifying and measuring the effective optical properties of nanometer-thick, graphene-based materials, based on the use of substrates consisting of a thin dielectric layer on silicon. High contrast…
We have developed scanning near-field microwave microscopes which can image electrodynamic properties of superconducting materials on length scales down to about 2 $\mu$m. The microscopes are capable of quantitative imaging of sheet…
We report on the microwave surface resistance of melt-textured Y_1.6Ba_2.3Cu_3.3O_7-x samples, doped with different amount of B_2O_3 and, subsequently, irradiated by thermal neutrons at the fluence of 1.476 \times 10^17 cm^-2. The microwave…
In this paper, we describe the modification of Nanoscale Impedance Microscopy (NIM), namely, a combination of contact-mode atomic force microscopy with local impedance measurements. The postulated approach is based on the application of…
Secondary Ions Mass Spectroscopy and Hall effect measurements were performed on boron doped silicon with concentration between 0.02 at.% and 12 at.%. Ultra-high boron doping was made by saturating the chemisorption sites of a Si wafer with…
We carried out room-temperature far-infrared (40--650~cm$^{-1}$) transmission measurements on undoped and bromine-doped powder samples of carbon nanofibers in stacked-cup cone geometry. The transmission spectra of both doped and undoped…
Superconducting boron-doped silicon films prepared by gas immersion laser doping (GILD) technique are analyzed by atom probe tomography. The resulting three-dimensional chemical composition reveals that boron atoms are incorporated into…
We describe near-field imaging of sample sheet resistance via frequency shifts in a resonant coaxial scanning microwave microscope. The frequency shifts are related to local sample properties, such as surface resistance and dielectric…
The contrast formation mechanism in Nanoscale Infrared Spectroscopy (Nano-IR or AFM-IR) is analyzed for the boundary between two layers with different light absorption, thermal and elastic parameters. Analytical results derived in the…
Resistive switching in thin films has been widely studied in a broad range of materials. Yet the mechanisms behind electroresistive switching have been persistently difficult to decipher and control, in part due to their non-equilibrium…
Boron-doped diamond granular thin films are known to exhibit superconductivity with an optimal critical temperature of Tc = 7.2K. Here we report the measured complex surface impedance of Boron-doped diamond films in the microwave frequency…