We describe quantitative imaging of the sheet resistance of metallic thin films by monitoring frequency shift and quality factor in a resonant scanning near-field microwave microscope. This technique allows fast acquisition of images at approximately 10 ms per pixel over a frequency range from 0.1 to 50 GHz. In its current configuration, the system can resolve changes in sheet resistance as small as 0.6 Ohms/sq for 100 Ohms/sq films. We demonstrate its use at 7.5 GHz by generating a quantitative sheet resistance image of a YBa2Cu3O7 (YBCO) thin film on a 5 cm-diameter sapphire wafer.
@article{arxiv.cond-mat/9712171,
title = {Quantitative Imaging of Sheet Resistance with a Scanning Near-Field Microwave Microscope},
author = {D. E. Steinhauer and C. P. Vlahacos and S. K. Dutta and B. J. Feenstra and F. C. Wellstood and Steven M. Anlage},
journal= {arXiv preprint arXiv:cond-mat/9712171},
year = {2009}
}
Comments
6 pages, 3 figures; To be published in Appl. Phys. Lett. (2/16/98); See also Steinhauer et al., Appl. Phys. Lett., vol. 71, p. 1736 (1997) cond-mat/9712142; See also http://www.csr.umd.edu/research/hifreq/micr_microscopy.html