Direct Orientation Contrast Imaging of Anti-Phase Domains on III-V Materials Using Scanning Electron Microscopy
Materials Science
2026-04-20 v1 Applied Physics
Abstract
Direct orientation contrast imaging of zinc-blende III-V materials is studied using scanning electron microscopy. A quantitative approach is taken using a 3 {\mu}m thick orientation-patterned GaP grown on GaAs sample, studying the anti-phase domain contrast with respect to the electron beam energy and the tilt angle. A qualitative approach is taken for III-V grown on non-polar materials with and without chemical mechanical polishing. Finally, a processing of the acquired image for GaP on Si reveals in plane preferential anti-phase boundaries.
Keywords
Cite
@article{arxiv.2604.15812,
title = {Direct Orientation Contrast Imaging of Anti-Phase Domains on III-V Materials Using Scanning Electron Microscopy},
author = {Brieg Le Corre and Clothilde Grenèche and Rozenn Bernard and Tony Rohel and Antoine Létoublon and Wijden Khelifi and Julie Le Pouliquen and Arnaud Grisard and Sylvain Combrié and Bruno Gérard and Abdelmounaim Harouri and Luc Le Gratiet and Grégoire Beaudoin and Konstantinos Pantzas and Isabelle Sagnes and Oliver Skibitzki and Gilles Patriarche and Charles Cornet and Yoan Léger},
journal= {arXiv preprint arXiv:2604.15812},
year = {2026}
}