Related papers: Spontaneous current generation in gated nanostruct…
Spin currents in channels of a high mobility GaAs/AlGaAs two-dimensional electron gas are generated and detected using spin-polarized quantum point contacts. We have recently shown that the relaxation length of spin currents is resonantly…
Self excitation is a mechanism which is ubiquitous for electromechanical power devices such as electrical generators. This is conventionally achieved by making use of the magnetic field component in electrical generators [1], where a good…
Locally-gated single-layer graphene sheets have unusual discrete energy states inside the potential barrier induced by a finite-width gate. These states are localized outside the Dirac cone of continuum states and are responsible for novel…
We have studied the spin-splitting effect in a four-terminal two-dimensional (2D) electron gas system with two potential barriers generated by two surface metal gates and an external perpendicular magnetic field. The calculations show that…
We consider a non-equilibrium cross-response phenomenon, whereby a driven magnetization gives rise to electric shot noise (but no d.c. current). This effect is realized on a nano-scale, with a small metallic ferromagnet which is…
Ultrafast photon-assisted tunneling is shown to lead to large nonlinear dynamic currents that can be used to generate dc rectified current as well as higher order harmonic response from a metasurface-coupled tunnel diode. This artificial…
Parametric generation of oscillations and waves is a paradigm, which is known to be realized in various physical systems. Unique properties of quantum superlattices allow to investigate high-frequency phenomena induced by the Bragg…
We present an overview of current-induced effects in nanoscale conductors with emphasis on their description at the atomic level. In particular, we discuss steady-state current fluctuations, current-induced forces, inelastic scattering and…
Sufficiently large electric current applied to metallic nanostructures can bring them far out-of-equilibrium, resulting in non-Ohmic behaviors characterized by current-dependent resistance. We experimentally demonstrate a linear dependence…
We study the lateral tunneling through the gate-voltage-controlled barrier, which arises as a result of partial elimination of the donor layer of a heterostructure along a fine strip using an atomic force microscope, between edge channels…
Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope…
Consider an electron drifting in a gas toward a collection electrode. A common misconception is that the electron produces a detectable signal only upon arrival at the electrode. In fact, the situation is quite the opposite. The electron…
The concept of direct current distribution minigrids has been gaining ground in academia and industry regarding the development of distribution grid applications with high penetration of distributed energy sources and storage systems. The…
We report measurements of the low frequency current fluctuations of a tunnel junction placed at very low temperature biased by a time-dependent voltage $V(t)=V(1+\cos 2\pi\nu t)$. We observe that the excess noise generated by the ac…
We analyze the dynamical evolution of the current and the charge density in a superlattice for fixed external dc voltage in the regime of self-sustained current oscillations, using a microscopic sequential tunneling model. Fronts of…
We present a simple and scalable technique for the fabrication of solution processed & local gated carbon nanotube field effect transistors (CNT-FETs). The approach is based on directed assembly of individual single wall carbon nanotube…
Low temperature transport measurements on a p-GaAs quantum point contact are presented which reveal the presence of a conductance anomaly that is markedly different from the conventional `0.7 anomaly'. A lateral shift by asymmetric gating…
N-polar GaN/AlN resonant tunneling diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy growth. The room-temperature current-voltage characteristics reveal a negative differential…
Negative differential conductance (NDC) manifests as a significant characteristic of various underlying physics and transport processes in hybrid superconducting devices. In this work, we report the observation of gate-tunable NDC outside…
We report an experimental study on the shot noise as well as the dc transport properties of a quantum point contact (QPC) whose conductance anomaly can be tuned electrostatically by the gate electrodes. By controlling the single QPC so that…