Related papers: Spontaneous current generation in gated nanostruct…
Self-sustained time-dependent current oscillations under dc voltage bias have been observed in recent experiments on n-doped semiconductor superlattices with sequential resonant tunneling. The current oscillations are caused by the motion…
We report conductance and supercurrent of InAs nanowires coupled to Al-superconducting electrodes with short channel lengths and good Ohmic contacts. The nanowires are suspended 15\,nm above a local gate electrode. The charge density in the…
The interplay of the electron exchange interaction and spin-orbit coupling results in spontaneous supercurrents near magnetic insulator islands, which are placed on the top of a two-dimensional (2D) superconductor, and whose magnetization…
We show theoretically that a strongly spin-polarized current can be generated in semiconductors by taking advantage of the ferromagnetic phase of a quantum dot array (QDA). A Hubbard model with coupling to leads is used to study the…
Nanofluidic ionic transistors typically require gate voltages above 1 V and operate only at sub millimolar ionic strengths, limiting their biocompatible applications. We demonstrate ionic transistors consisting of single sub 10 nm nanopores…
We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shifts in the quantum capacitance associated with single-electron…
In this paper, we have worked out a pseudo two dimensional (2D) analytical model for surface potential and drain current of a long channel p-type Dual Material Gate (DMG) Gate All-Around (GAA) nanowire Tunneling Field Effect Transistor…
Nanoscale superconductor-semiconductor hybrid devices are assembled from InAs semiconductor nanowires individually contacted by aluminum-based superconductor electrodes. Below 1 K, the high transparency of the contacts gives rise to…
GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation…
We show that local injection of pure spin current into an electrically disconnected ferromagnetic - normal-metal sandwich induces electric currents, that run along closed loops inside the device, and are powered by the source of the spin…
Electronic transport through nanostructures is greatly affected by the presence of superconducting leads. If the interface between the nanostructure and the superconductors is sufficiently transparent, a dissipationless current…
We report a bi-polar multiple periodic negative differential conductance (NDC) effect on a single cage-shaped Ru nanoparticle measured using scanning tunneling spectroscopy. This phenomenon is assigned to the unique multiply-connected cage…
Photo-gated transistors based on dye-sensitized nanocrystalline titanium dioxide thin film are established. A transistor-like transport behavior characterized by the linear increase, saturated plateau, and breakdown-like increase in the…
The detection of apparent anomalous forces in the vicinity of high-Tc superconductors under non equilibrium conditions has stimulated an experimental research in which the operating parameters of the experiment have been pushed to values…
It is shown that the excitation of charge carriers by ac electric field with zero average driving leads to a direct electric current in quantum well structures. The current emerges for both linear and circular polarization of the ac…
Electrostatic gating lies in the heart of modern FET-based integrated circuits. Usually, the gate electrode has to be placed very close to the conduction channel, typically a few nanometers, in order to achieve efficient tunability.…
We investigate classical anomalous electrical transport in a driven, resistively and capacitively shunted Josephson junction device. Novel transport phenomena are identified in chaotic regimes when the junction is subjected to both, a time…
We study a coherent conductor supporting a single edge channel in which alternating current pulses are created by local time-dependent gating and sent on a beam-splitter realized by a quantum point contact. The current response to the gate…
Recently [Physics Letters A, 374, (2010) 1801] the concept of vacuum capacitor spontaneously charged harnessing the heat from a single thermal reservoir at room temperature has been introduced, along with a mathematical description of its…
We measure the small signal, 1 GHz source-drain dynamical conductance of a back-gated single-walled carbon nanotube field effect transistor at both low and high dc bias voltages. At all bias voltages, the intrinsic device dynamical…