Related papers: Spontaneous current generation in gated nanostruct…
We investigate electrically-induced spin currents generated by the spin Hall effect in GaAs structures that distinguish edge effects from spin transport. Using Kerr rotation microscopy to image the spin polarization, we demonstrate that the…
A comprehensive study of drain current dispersion effects in $\beta$-Ga$_2$O$_3$ FETs has been done using DC, pulsed and RF measurements. Both virtual gate effect in the gate-drain access region and interface traps under the gate are most…
Electronic current densities can reach extreme values in highly conducting nanostructures where constrictions limit current. For bias voltages on the 1 volt scale, the highly non-equilibrium situation can influence the electronic density…
The unconventional Josephson coupling in a ferromagnetic weak link between d-wave superconductors is studied theoretically. For strong ferromagnetic barrier influence, the unconventional coupling, with ground state phase difference across…
We present the comparison of results from the generation and the measurement of direct currents in the pA range, performed with traceable state-of-the-art methods at highest accuracy. The currents were generated with the capacitor charging…
The interaction between spin and nanomechanical degrees of freedom attracts interest from the viewpoint of basic science and device applications. We study the magnon current induced by the torsional oscillation of ferromagnetic…
We investigate theoretically the dynamics of a spatially symmetric shuttle-system subjected to an ac gate voltage. We demonstrate that in such a system parametric excitation gives rise to mechanical vibrations when the frequency of the ac…
Weakly coupled semiconductor superlattices under dc voltage bias are excitable systems with many degrees of freedom that may exhibit spontaneous chaos at room temperature and act as fast physical random number generator devices.…
Superconducting diodes are a recently-discovered quantum analogueue of classical diodes. The superconducting diode effect relies on the breaking of both time-reversal and inversion symmetry. As a result, the critical current of a…
It was recently discovered that supercurrents flowing through thin superconducting nanowires can be quenched by a gate voltage. This gate control of supercurrents, known as the GCS effect, could enable superconducting transistor logic.…
The local conductivity in the channel of a thin-film field-effect transistor is proportional to the charge density induced by the local gate voltage. We show how this determines the frequency- and position-dependence of the charge induced…
It has been shown that in metals and semiconductors the joint action of permanent magnetic and AC electric fields leads to arising of DC surface electric current. This is due to essentially non-linear dynamics of electronic gas in surface…
We show that double-layer graphene (DLG), where an external potential induces an charge-imbalance between $n$- and $p$-type layers, is a promising candidate to realize an exciton condensate in equilibrium. To prove this phenomenon…
We present an extensive experimental and theoretical study of the proximity effect in InAs nanowires connected to superconducting electrodes. We fabricate and investigate devices with suspended gate-controlled nanowires and nonsuspended…
A radical restructuring of the optical response of highly excited electron-hole plasma formed in a mesoscopic GaAs/AlGaAs channel in a quantizing magnetic field when an electric current flows in the channel has been discovered. In the…
Hybrid turnstiles have proven to generate accurate single-electron currents. The usual operation consists of applying a periodic modulation to a capacitively coupled gate electrode and requires a non-zero DC source-drain bias voltage. Under…
In this work we suggest a phenomenological theory of photogalvanic phenomena in superconducting materials and structures revealing the diode effect. Starting from a generalized London model including the quadratic nonlinearity in the…
We consider nanowires in the field effect transistor device configuration. Modeling each nanowire as a one dimensional lattice with random site potentials, we study the heat exchanges between the nanowire electrons and the substrate…
Understanding the origin of hysteresis in the channel resistance from top gated graphene transistors is important for transistor applications. Capacitance - voltage measurements across the gate oxide on top gated bilayer graphene show…
Unconventional d-wave superconductors with pair-breaking edges are predicted to have ground states with spontaneously broken time-reversal and translational symmetries. We use the quasiclassical theory of superconductivity to demonstrate…