Related papers: Electron effective mobility in strained Si/Si1-xGe…
We report a study of the strain state of epitaxial MnSi films on Si(111) substrates in the thick film limit (100-500~\AA) as a function of film thickness using polarization-dependent extended x-ray absorption fine structure (EXAFS). All…
It was recently proposed that the stress state of a material can also be altered via electron or hole doping, a concept termed electronic stress (ES), which is different from the traditional mechanical stress (MS) due to lattice contraction…
We have measured the weak localization magnetoresistance in (001)-oriented Si MOS structures with a wide range of mobilities. For the quantitative analysis of the data, we have extended the theory of weak-localization corrections in the…
Coarse-grained modeling of dynamics on vicinal surfaces concentrates on the diffusion of adatoms on terraces with boundary conditions at sharp steps, as first studied by Burton, Cabrera and Frank (BCF). Recent electromigration experiments…
We study the electrical modulation of the transport properties of silicene constrictions with different geometrical structures by adopting the tight-binding model and non-equilibrium Green's function method. The band structure and…
We investigated the magnetotransport properties of strained, 80nm thick HgTe layers featuring a high mobility of mu =4x10^5 cm^2/Vs. By means of a top gate the Fermi-energy is tuned from the valence band through the Dirac type surface…
We carry out extensive direct path integral Monte Carlo (PIMC) simulations of the uniform electron gas (UEG) at finite temperature for different values of the spin-polarization $\xi$. This allows us to unambiguously quantify the impact of…
Strain can efficiently modulate the bandgap and carrier mobilities in two-dimensional (2D) materials. Conventional mechanical strain-application methodologies that rely on flexible, patterned or nano-indented substrates are severely limited…
Spin transport and spin dynamics after femtosecond laser pulse irradiation of iron (Fe) are studied using a kinetic Monte Carlo model. This model simulates spin dependent dynamics by taking into account two interaction processes during…
Magnetotransport in 2DES's formed in Si-MOSFET's and Si/SiGe quantum wells at low temperatures is reported. Metallic temperature dependence of resistivity is observed for the n-Si/SiGe sample even in a parallel magnetic field of 9T, where…
Process-related and stress-induced changes in threshold voltage are major variability concerns in ultra-scaled CMOS transistors. The device designers consider this variability as an irreducible part of the design problem and use different…
We investigate theoretically 2D electronic transport in Si:P $\delta$-doped layers limited by charged-dopant scattering. Since the carrier density is approximately equal to the dopant impurity density, the density dependent transport shows…
We report on the hole mobility of ultra-narrow [110] Si channels as a function of the confinement length scale. We employing atomistic bandstructure calculations and linearized Boltzmann transport approach. The phonon-limited mobility of…
Using Monte Carlo simulations, we investigate the electrical conductivity of networks of hard rods as a function of the volume fraction for two tunneling conductance models. For a simple, orientationally independent tunneling model, we…
The sensitive dependence of electronic and thermoelectric properties of MoS$_2$ on the applied strain opens up a variety of applications in the emerging area of straintronics. Using first principles based density functional theory…
Using available quantum Monte Carlo predictions for a strictly 2D electron gas, we have estimated the spin susceptibility of electrons in actual devices taking into account the effect of the finite transverse thickness and finding a very…
A simulation framework that couples atomistic electronic structures to Boltzmann transport formalism is developed and applied to calculate the transport characteristics of thin silicon nanowires (NWs) up to 12nm in diameter. The…
Atomically thin semiconducting MoS2 is of great interest for high-performance flexible electronic and optoelectronic devices. Initial measurements using back-gated field-effect transistor (FET) structures on SiO2 yielded mobility of 1-50…
We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer $\gamma$-InSe films can be tuned over a wide range. This tunability is the result of a competition between…
We have investigated correlation between spin polarization and magnetotransport in a high mobility silicon inversion layer which shows the metal-insulator transition. Increase in the resistivity in a parallel magnetic field reaches…