Related papers: Electron effective mobility in strained Si/Si1-xGe…
Topological insulator (TI) surface states exert strong spin-orbit torques. When the magnetization is in the plane its interaction with the TI conduction electrons is non-trivial, and is influenced by extrinsic spin-orbit scattering. This is…
We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different…
Monte Carlo simulations are performed to study the in-plane transport of spin-polarized electrons in III-V semiconductor quantum wells. The density matrix description of the spin polarization is incorporated in the simulation algorithm. The…
Orbital degeneracy of the electronic conduction band edge in silicon is a potential roadblock to the storage and manipulation of quantum information involving the electronic spin degree of freedom in this host material. This difficulty may…
Effective mass anomalies due to the geometrical effects are investigated in silicon nanostructures using first-principles calculations for the first time. In \{111\} and \{110\} biaxially strained Si, it is found that longitudinal effective…
The plasma dispersion effect and free-carrier absorption are widely used for changing refractive index and absorption coefficient in Si-based optical modulators. However, these free-carrier effects in Si are not large enough for making the…
The strain effect on electronic structure and thermoelectric properties of Higher Manganese Silicides (HMSs) Mn4Si7 was studied using Density Functional Theory (DFT) and through solving Boltzman Transport Equation (BTE). We found that the…
Recent experiments reveal that the strained bulk HgTe can be regard as a three-dimensional topological insulator (TI). Motivated by this, we explore the strain effects on the magnetotransport properties of the HgTe surface states at…
Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of…
It is shown that the electronic conduction in silicon-on-insulator (SOI) layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconductor structures (MOS). The peak in the electron mobility…
The high field charge injection and transport properties in reinforced silicone dielectrics were investigated by measuring the time-dependent space charge distribution and the current under dc conditions up to the breakdown field, and were…
In a recent paper (JPCM 29, 445302 (2017)) we have studied the effects of mechanical strain and magnetic field on the electronic transport properties in graphene. In this article we extended our work to Weyl semimetals (WSM). We show that…
We present a simple model to describe the lowest-subbands surface scattering in locally oxidized silicon nanowires grown in the [110] direction. To this end, we employ an atomistically scaled effective mass model projected from a…
The electromigration (EM) of metallic lines is studied in terms of competition between two percolative processes taking place in a random resistor network. The effects associated with the transport of mass and with the consequent growth of…
This work presents transport coefficients of electrons (bulk drift velocity, longitudinal diffusion coefficient, and effective ionization frequency) in CO2 measured under time-of-flight conditions over a wide range of the reduced electric…
The electronic properties of few-layer graphene grown on the carbon-face of silicon carbide (SiC) are found to be strongly dependent on the number of layers. The carrier mobility is larger in thicker graphene because substrate-related…
We study the magnetic properties of cylindrical ferromagnetic core - antiferromagnetic shell nanowires using Monte Carlo simulations and a classical Heisenberg Hamiltonian in order to elucidate the impact of the oxidized shell on the…
Bandstructure effects in the electronic transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 10-band sp3d5s* semi-empirical atomistic tight-binding model coupled…
The effect of silicon-oxide interface roughness on the weak-localization magnetoconductance of a silicon MOSFET in a magnetic field, tilted with respect to the interface, is studied. It is shown that an electron picks up a random Berry's…
We apply the quantum Singwi-Tosi-Land-Sjolander (QSTLS) theory for a study of many-body effects in the quasi-two-dimensional (Q2D) electron liquid (EL) in GaAs/AlxGa1-xAs heterojunctions. The effect of the layer thickness is included…