Monte Carlo Simulation of Spin-Polarized Transport
Mesoscale and Nanoscale Physics
2010-09-22 v1 Quantum Physics
Abstract
Monte Carlo simulations are performed to study the in-plane transport of spin-polarized electrons in III-V semiconductor quantum wells. The density matrix description of the spin polarization is incorporated in the simulation algorithm. The spin-orbit interaction terms generate coherent evolution of the electron spin polarization and also cause dephasing. The spatial motion of the electrons is treated semiclassically. Three different scattering mechanisms--optical phonons, acoustic phonons and ionized impurities--are considered. The electric field is calculated self-consistently from the charge distribution. The Monte Carlo scheme is described, and simulation results are reported for temperatures in the range 77-300 K.
Keywords
Cite
@article{arxiv.cond-mat/0302395,
title = {Monte Carlo Simulation of Spin-Polarized Transport},
author = {Min Shen and Semion Saikin and Ming-C. Cheng and Vladimir Privman},
journal= {arXiv preprint arXiv:cond-mat/0302395},
year = {2010}
}
Comments
11 pages, 4 figures