Related papers: Electron effective mobility in strained Si/Si1-xGe…
A detailed comparison is presented of the temperature dependence of the conductivity of dilute, strongly interacting electrons in two-dimensional silicon inversion layers in the metallic regime in the presence and in the absence of a…
We report on n-type degenerate doping in MOVPE grown \b{eta}-(Al0.26Ga0.74)2O3 epitaxial thin films and modulation doping in \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure. Alloy composition is confirmed using HRXRD measurements.…
We report the observation in the direct space of the transport of a few thousand charges submitted to a tunable electric field along the surface of a silicon oxide layer. Charges are both deposited and observed using the same Electrostatic…
In this paper, a three-dimensional lattice model based on the Monte Carlo approach is presented. This model is developed to investigate the kinetics of morphology change during phase separation in nonstoichiometric Si oxide (SiOx, x < 2)…
A simple Monte Carlo procedure is described for simulating the multiple scattering and absorption of electrons with the incident energy in the range 1-50 keV moving through a slab of uniformly distributed material of given atomic number,…
Scanning tunneling microscopy (STM) images are obtained for the first time on few layer and twisted multilayer epitaxial graphene states synthesized on n+ 6H-SiC a-plane non-polar surface. The twisted graphene is determined to have a…
We have measured the conductivity of high-mobility (001) Si metal-oxide-semiconductor field effect transistors (MOSFETs) over wide ranges of electron densities n=(1.8-15)x10^11cm^2, temperatures T=30mK-4.2K, and in-plane magnetic fields…
Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron beam irradiation on the…
The effects of contact geometry and ideality on InGaAs and Si nano-scale n-channel FinFET performance are studied using a quantum-corrected semi-classical Monte Carlo method. Illustrative end, saddle/slot, and raised source/drain contacts…
The structures of the superconducting spin valve (SSV) Fe/Si$_3$N$_4$/Pb/Si$_3$N$_4$/Fe (where Si$_3$N$_4$ is a dielectric insulating layer of controlled thickness) were investigated. The dependence of the magnitude of the SSV effect on the…
Strain modulated electronic properties of Si/Ge core-shell nanowires along [110] direction were reported based on first principles density-functional theory calculations. Particularly, the energy dispersion relationship of the…
We analyze fluctuation of the layer thicknesses and its influence on the strain state of (In,Ga)As/(Al,Ga)As micro-tubes containing quantum well structures. In those structures a curved high-mobility two-dimensional electron gas (HM2DEG) is…
Secondary electron emission (SEE) from inner linings of plasma chambers in electric thrusters for space propulsion can have a disruptive effect on device performance and efficiency. SEE is typically calculated using elastic and inelastic…
Two phenomena have been recently observed in high-mobility Si MOS structures: (1) strong enhancement of the metallic conduction at low temperatures, T < 2K, and (2) the scaling behavior of the temperature and electric field dependences of…
Carbon-based molecular semiconductors are explored for application in spintronics because their small spin-orbit coupling promises long spin life times. We calculate the electronic transport from first principles through spin valves…
The general theory for quantum simulation of cubic semiconductor n-MOSFETs is presented within the effective mass equation approach. The full three-dimensional transport problem is described in terms of coupled transverse subband modes…
A comparison of porous structures formed from silicon (Si) wafers with different resistivities has been reported here based on the morphological studies carried out using scanning electron microscope (SEM). The porous Si samples have been…
SiGe islands are used to induce tensile strain in the Si channel of Field Effect Transistors to achieve larger transconductance and higher current driveabilities. We report on x-ray diffraction experiments on a single fully-processed and…
Proximity effect in a mechanically exfoliated Bi1.95Sb0.05Se3 topological insulator (TI) single crystal partially covered with disordered superconducting (SC) Mo thin film is reported. Magnetotransport measurement was performed…
Electron transport in the transistor structure based on thin undoped GaAs-in-Al2O3 quantum wire is simulated by ensemble Monte-Carlo method taking into account electron scattering by the phonons and surface roughness. The influence of…