Related papers: Epitaxial MgB2 thin films on ZrB2 buffer layers: s…

The biaxially textured growth of superconducting Co-doped BaFe2As2 (Ba-122) thin films has been realized on ion beam assisted deposition (IBAD) MgO coated conductor templates by employing an iron buffer architecture. The iron pnictide…

We report on magnetron deposition of thin superconducting rhenium films on sapphire substrates. During the deposition, substrates were held at ambient temperature. Critical temperature of the films is Tc~3.6 K. Films have polycrystalline…

The MgB2 - based material high-pressure synthesized at 2 GPa and 800 C for 1 h from Mg and B (taken in the stoichiometry ratio of MgB2) with addition of 2-10 wt% of Ti demonstrated the critical current density (jc) higher than 100 kA/cm^2…

We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 1000 {\Omega}.cm and carrier concentrations of 10E16 cm-3 are obtained for films with…

The observation of superconductivity in the layered transition metal oxide NaxCoO2 y H2O (K. Takada et al., Nature 422, 53 (2003)) has caused a tremendous upsurge of scientific interest due to its similarities and its differences to the…

Epitaxially grown full Heusler alloy of Rh2MnSb thin films were prepared for the first time using DC magnetron sputtering. The films were deposited on MgO [001] substrates with a deposition temperature of 600{\deg}C, 700{\deg}C, and…

Magneto-opitcal studies of a c-oriented epitaxial MgB2 film with critical current density 10^7 A/cm^2 demonstrate a breakdown of the critical state at temperatures below 10 K [cond-mat/0104113]. Instead of conventional uniform and gradual…

While pyrochlore iridate thin films are theoretically predicted to possess a variety of emergent topological properties, experimental verification of these predictions can be obstructed by the challenge in thin film growth. Here we report…

The effects of Mg deficiency in MgB2 films grown by using hybrid physical-chemical vapor deposition were investigated after vacuum annealing at various temperatures. High-quality MgB2 films grown on c-cut Al2O3 substrates with different…

The review considers bulk MgB2-based materials in terms of their structure, superconducting and mechanical properties. Superconducting transition temperatures of 34.5-39.4 K, critical current densities of 1.8-1.0 x E6 A/sq.cm in self field…

LaFeAsO1-xFx thin films were deposited successfully on (001)-oriented LaAlO3 and MgO substrates from stoichiometric LaFeAsO1-xFx polycrystalline targets with fluorine concentrations up to x = 0.25 by PLD. Room temperature deposition and…

Wurtzite GaN:Mn films on sapphire substrates were successfully grown by use of the molecular beam epitaxy (MBE) system. The film has an extremely high Curie temperature of around 940 K, although the Mn concentration is only about 3 ~ 5 %.…

This paper reports on the deposition of amorphous and crystalline thin films of Ga2O3 by reactive pulsed direct current magnetron sputtering from a liquid gallium target onto fused (f-) quartz and c plane (c-) sapphire substrates, where the…

We present Nb thin films deposited in-situ on GaAs by combining molecular beam epitaxy and magnetron sputtering within an ultra-high vacuum cluster. Nb films deposited at varying power, and a reference film from a commercial system, are…

A relatively high critical temperature, Tc, approaching 40 K, places the recently-discovered superconductor magnesium diboride (MgB2) intermediate between the families of low- and copper-oxide-based high-temperature superconductors (HTS).…

Two-dimensional (2D) ferromagnetic materials have been exhibiting promising potential in applications, such as spintronics devices. To grow epitaxial magnetic films on silicon substrate, in the single-layer limit, is practically important…

Infrared reflectance spectra of an epitaxial Bi2FeCrO6 thin film prepared by pulsed laser deposition on LaAlO3 substrate were recorded between 10 and 900 K. No evidence for a phase transition to the paraelectric phase was observed, but some…

We report indications of a phase transition in carbonaceous MgB2 above 9 GPa at 300 K after stress relaxation by laser heating. The transition was detected using Raman spectroscopy and X-ray diffraction. The observed changes are consistent…

High–quality epitaxial YNixMn1-xO3 thin films have been successfully grown on SrTiO3 (100) (STO) by pulsed laser deposition. X-ray diffraction studies showed that the films deposited on STO are fully c-axis oriented and exhibit…

Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap >4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. However, in-situ hetero-epitaxy of BN/diamond or vice-versa…