Related papers: Epitaxial MgB2 thin films on ZrB2 buffer layers: s…
We have successfully prepared the MgB2 superconducting bulk and powdered materials by the method of combustion synthesis. The starting materials used in this study were powders of Mg and B. X-ray powder diffraction pattern was well assigned…
Nb3Sn films were fabricated by multilayer sequential sputtering on Nb at substrate temperatures ranging from room temperature to 250 {\deg}C. The multilayers were then annealed inside a separate vacuum furnace at 950 {\deg}C for 3h. The…
The influence of the deposition pressure PO2 and substrate temperature TS during the growth of Bi2FeCrO6 thin films grown by pulsed laser deposition has been investigated. It is found that the high volatility of Bi makes the deposition very…
The influence of SiC-impurity layer and growth temperature on microstructure and superconducting properties were studied for MgB2 superconducting tapes. The pulsed laser deposition (PLD) system was used for the deposition of amorphous…
During the growth of metal thin films on dielectric substrates at a given deposition temperature T, the film's morphology is conditioned by the magnitude and asymmetry of up- and downhill diffusion. Any severe change of this mechanism leads…
Low-temperature epitaxial growth of refractory transition-metal nitride thin films by means of physical vapor deposition has been a recurring theme in advanced thin-film technology for several years. In the present study, 150-nm-thick…
We have studied zirconia films on a Rh(111) substrate with thicknesses in the range of 2-10 monolayers (ML) using scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). Zirconia was deposited using a UHV-compatible…
We demonstrate the growth of Co-doped BaFe2As2 (Ba-122) thin films on AEF2 (001) (AE: Ca, Sr, Ba) single crystal substrates using pulsed laser deposition. All films are grown epitaxially despite of a large misfit of -10.6% for BaF2…
Superconducting and epitaxially grown LaFeAsOF thin films were successfully prepared on (001)-oriented LaAlO3 substrates using pulsed laser deposition. The prepared thin films show exclusively a single in-plane orientation with epitaxial…
Superconductivity has been found in RuN films obtained by reactive magnetron sputtering. This is a novel member of the metal nitride superconductors family. The critical temperature of the superconducting transition varies depending on the…
A new two-dimensional material { Mg2B4C2, belonging to the family of the conventional superconductor MgB2, is theoretically predicted to exhibit superconductivity with critical temperature Tc estimated in the 47-48 K range (predicted using…
In this paper we present normal state magnetoresistivity data of magnesium diboride epitaxial thin films with different levels of disorder, measured at 42K in magnetic fields up to 45 Tesla. Disorder was introduced in a controlled way…
Heteroepitaxial spinel ferrites NiFe2O4 and CoFe2O4 films have been prepared by pulsed laser deposition (PLD) at various temperatures (175 - 690 {\deg}C) under ozone/oxygen pressure of 10 mTorr. Due to enhanced kinetic energy of ablated…
We have investigated the initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films prepared by pulsed laser deposition on sapphire (0001) substrates. High-resolution x-ray diffraction and…
The terahertz (THz) properties of ZrN thin films grown with CMOS-techniques on industry-standard 300 mm silicon wafers are investigated in order to explore their superconducting behavior. The films have thicknesses ranging from 18 to 48 nm,…
We have studied mixed-state dissipation in epitaxial MgB$_2$ thin films by measurements of resistive transition, current-voltage characteristics, Hall effect, and point-contact tunnelling spectrum. We found that unlike single gap…
Morphotropic phase boundaries (MPBs) show substantial piezoelectric and dielectric responses, which have practical applications. The predicted existence of MPB in HfO2-ZrO2 solid solution thin film has provided a new way to increase the…
We report on a combined structural and electronic analysis of niobium ultrathin films (from 2 to 10 nm) deposited in ultra-high vacuum on atomically flat R-plane sapphire wafers. A textured polycrystalline morphology is observed for the…
The high transition temperature and low surface resistance of MgB2 attracts interest in its potential application in superconducting radio frequency accelerating cavities. However, compared to traditional Nb cavities, the viability of MgB2…
This paper reports on the growth and characterization of hexagonal boron nitride (hBN) and its use for solid-state thermal neutron detection. The hBN epilayers were grown by metalorganic chemical vapor deposition on sapphire substrates at a…