Related papers: Epitaxial MgB2 thin films on ZrB2 buffer layers: s…
The two tone intermodulation distortion arising in MgB2 thin films synthesized by hybrid physical-chemical vapour deposition is studied in order to probe the influence of the two bands on the nonlinear response of this superconductor. The…
A non-equilibrium phase (Sr1-xLax)Fe2As2 was formed by epitaxial film-growth. The resulting films emerged superconductivity along with suppression of the resistivity anomaly that is associated with magnetic and structural phase transitions.…
Seven years after the discovery of superconductivity in magnesium diboride, the fundamental superconducting properties of this compound are well known and the peculiar current transport in polycrystalline materials is essentially…
In this paper, we report the high temperature mediated structural phase transformation from B1 to B2 phase in solgel derived Cd0.2Zn0.8O nanocomposite thin film for the temperature range of 700 to 900 degree centigrade. Xray diffraction…
The double perovskite Sr2CrReO6 is an interesting material for spintronics, showing ferrimagnetism up to 635 K with a predicted high spin polarization of about 86%. We fabricated Sr2CrReO6 epitaxial films by pulsed laser deposition on…
High-critical-temperature (Tc) superconductivity at 48 K is reported for hydrogen-doped SmFeAsO epitaxial films on MgO single-crystal substrates. The key processes are pulsed laser deposition to grow undoped SmFeAsO epitaxial films and…
We report magnetic field dependent magnetization and microwave impedance measurements on a MgB2 superconductor prepared by high pressure synthesis. We find that the upper critical field is linearly dependent on temperature near Tc and the…
Zinc ferrite (ZnFe$_{\text{2}}$O$_{\text{4}}$) epitaxial thin films were grown by reactive magnetron sputtering on MgAl$_{\text{2}}$O$_{\text{4}}$ and Al$_{\text{2}}$O$_{\text{3}}$ substrates varying a range of preparation parameters. The…
Femtosecond pump-probe studies show that carrier dynamics in MgB2 films is governed by the sub-ps electron-phonon (e-ph) relaxation present at all temperatures, the few-ps e-ph process well pronounced below 70 K, and the sub-ns…
Herein, we report CeIrIn5 thin-film growth on a MgF2 (001) substrate using pulsed laser deposition technique. X-ray diffraction analysis showed that the thin films were either mainly a-axis-oriented (TF1) or a combination of a- and…
Magnetic relaxation and critical current density have been measured on a $MgB_2$ thin film in a wide region of temperature with the magnetic field up to 8 T. The irreversibility line has also been determined. It is found that the relaxation…
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have a range of unique physics properties and could be used in the development of electronics, photonics, spintronics and quantum computing devices. The mechanical exfoliation…
We report the structural, magnetic, and interfacial spin transport properties of epitaxial terbium iron garnet (TbIG) ultrathin films deposited by magnetron sputtering. High crystallinity was achieved by growing the films on gadolinium…
The properties of epitaxial Bi2FeCrO6 thin films, recently synthesized by pulsed laser deposition, have partially confirmed the theoretical predictions (i.e. a magnetic moment of 2 muB per formula unit and a polarization of ~80 microC/cm2…
Hexagonal boron nitride (hBN) has been grown on sapphire substrates by ultra-high temperature molecular beam epitaxy (MBE). A wide range of substrate temperatures and boron fluxes have been explored, revealing that high crystalline quality…
We report on the electrical properties of polycrystalline NbO2 thin film vertical devices grown on TiN coated SiO2/Si substrates using pulsed laser deposition. First, we analyzed the thickness and contact size dependences of threshold…
Pulsed-laser deposition has been used to grow epitaxial thin films of the giant-dielectric-constant material CaCu_3Ti_4O_{12} on LaAlO_3 and SrTiO_3 substrates with or without various conducting buffer layers. The latter include…
We report on the chemically stabilized epitaxial w-BN thin film grown on c-plane sapphire by pulsed laser deposition under slow kinetic condition. Traces of no other allotropes such as cubic (c) or hexagonal (h) BN phases are present.…
The preparation in thin film form of the known icosahedral phase in Ti-Ni-Zr bulk alloys has been investigated as a function of substrate temperature. Films were deposited by Pulsed Laser Deposition on sapphire substrates at temperatures…
Controlling the crystalline structure of Hafnium Zirconate and its epitaxial relationship to a semiconducting electrode has a high technological interest, as ferroelectric materials are key ingredients for emerging electronic devices. Using…