Related papers: Epitaxial MgB2 thin films on ZrB2 buffer layers: s…

We report on epitaxial growth of single-phase [Pb(Zr0.57Ti0.43)O3]0.8[Pb(Fe2/3W1/3)O3]0.2 (PZT-PFW) solid-solution thin films using pulsed laser deposition. X-ray diffraction measurements reveal that the films have a tetragonal structure.…

We present electric and magnetic properties of 0.8Pb(Fe1/2Nb1/2)O3-0.2Pb(Mg1/2W1/2)O3 films epitaxially grown on (001) SrTiO3 substrates using pulsed laser deposition. A narrow deposition window around 710 oC and 0.2 mbar has been…

We report the fabrication of MgB2 with bulk superconducting properties by conventional solid state methods at temperatures as low as 550 C. Mg deficiencies of the type Mg1-xB2 were tested. Tc was found to decrease by about 1K at large x,…

Progress in superconducting device and detector technologies over the past decade have realized practical applications in quantum computers, detectors for far-infrared telescopes, and optical communications. Superconducting thin film…

A series of MgB2 thin films were fabricated by pulsed laser deposition (PLD), doped with various amounts of Si up to a level of 18wt%. Si was introduced into the PLD MgB2 films by sequential ablation of a stoichiometric MgB2 target and a Si…

We report synthesis of phase pure multiferroic YMnO3 thin films on sapphire (0001)with conducting ZnGaO buffer contact layer. Films were prepared by using pulsed laser deposition technique and characterized using x-ray diffraction(XRD),…

Possible existence of topologically protected surface in samarium hexaboride has created a strong need for investigations allowing to distinguish between properties coming from the surface states and those originating in the (remaining)…

In the present work we study the growth by pulsed laser deposition of YBa$_2$Cu$_3$O$_{7-\delta}$ (YBCO) films on the r-cut sapphire substrates. To improve the matching of the lattice parameters between the substrate and the film we use…

We have found that single-crystal films can be grown on (0001) Al2O3 substrates through the golden relation of a perfect lattice-matching ratio between the a-axis lattice constants of MgB2 and Al2O3. Selected area electron diffraction…

Epitaxial LaRh1/2Mn1/2O3 thin films have been grown on (001)-oriented LaAlO3 and SrTiO3 substrates using pulsed laser deposition. The optimized thin film samples are semiconducting and ferromagnetic with a Curie temperature close to 100 K,…

We report on electrical transport properties of epitaxial Ba(Fe1-xNix)2As2 thin films grown by pulsed laser deposition in static magnetic fields up to 35 T. The thin film shows a critical temperature of 17.2 K and a critical current density…

A complexing molecule electrodeposition technique has been developed for the deposition of low cost, lightweight MgB2 films, for the first time. Different deposition parameters such as bath composition, deposition potential, current…

We have studied the structure of the superconducting gap in MgB2 thin films by means of point-contact spectroscopy using a gold tip. The films were produced by depositing pure boron on a sapphire substrate, using e-beam evaporation,…

We review the thin film growth, chemistry, and physical properties of Group 4-6 transition-metal diboride (TMB2) thin films with AlB2-type crystal structure (Strukturbericht designation C32). Industrial applications are growing rapidly as…

According to the crystal structure of MgB$_{2}$ and band structure calculations quasi-two-dimensional (2D) boron planes are responsible for the superconductivity. We report on critical fields and resistance measurements of 30 nm thick…

We report the growth, characterization and superconducting properties of a new amorphous superconductor, RexZr ( x ~ 6 ), in thin film form. Films were grown by pulsed laser deposition with the substrate kept at room temperature. Films with…

We present results on growth of large area epitaxial ReS2 thin film both on c plane sapphire substrate and MoS2 template by pulsed laser deposition (PLD). Films tend to grow with (0001) ReS2 perpendicular to (0001) Al2O3 and (0001) ReS2…

This paper reports on the epitaxial growth of hexagonal boron nitride (hBN) films on sapphire substrates in a cold wall chemical vapor deposition (CVD) system where different sapphire nitridation and hBN growth temperatures were employed. A…

Homogeneous highly epitaxial LaSrMnO3 (LSMO) thin films have been grown on Yttria-stabilized-Zirconia (YsZ) / CeO2 buffer layers on technological relevant 4" silicon wafers using a Twente Solid State Technology B.V. (TSST) developed large…

We present a study of the electrodynamic response of MgB2 pellets and thin film samples exhibiting critical temperatures ranging between 26 and 38 K. We have performed accurate measurements of the surface impedance ZS =RS+iXS as a function…