Related papers: Voltage-Controlled Spin Selection in a Magnetic Re…
The present work experimentally demonstrates the fabrication of CVD grown monolayer MoS2 ultra thin quantum well based double barrier resonant tunneling device (RTD) architecture well compatible with conventional CMOS fabrication…
Spin transfer torque nano-oscillators are potential candidates for replacing the traditional inductor based voltage controlled oscillators in modern communication devices. Typical oscillator designs are based on trilayer magnetic tunnel…
Magnetic tunnel junctions with wide band gap semiconductor ZnTe barrier were fabricated. A very low barrier height and sizable magnetoresistance were observed in the Fe/ZnTe/Fe junctions at room temperature. The nonlinear I-V characteristic…
Sharp threshold-like transitions between two stable nuclear spin polarizations are observed in optically pumped individual InGaAs self-assembled quantum dots embedded in a Schottky diode when the bias applied to the diode is tuned. The…
The quantum tunneling of the magnetization vector between excited levels are studied theoretically in single-domain ferromagnetic nanoparticles with biaxial crystal symmetry placed in an external magnetic field at an arbitarily directed…
We have fabricated hybrid magnetic complexes from V atoms and tetracyanoethylene (TCNE) ligands via atomic manipulation with a cryogenic scanning tunneling microscope. Using tunneling spectroscopy we observe spin-polarized molecular…
Electronic processes in a semiconductor system consisting of some Resonant Tunnelling Structures, built in the depletion region of a Schottky barrier, are investigated. It is shown that the Schottky barrier can block or unblock the resonant…
Quantum spin Hall insulators, recently realized in HgTe/(Hg,Cd)Te quantum wells, support topologically protected, linearly dispersing edge states with spin-momentum locking. A local magnetic exchange field can open a gap for the edge…
The high efficiency of a tunnel magnetic transistor as a source of spin-polarized electrons has been proven recently [X. Jiang {\it et al.}, Phys. Rev. Lett. {\bf 90}, 256603 (2003)]. A concept of this device based on an active group of hot…
Spin splitting in p-type semiconductor nanowires is strongly affected by the interplay between quantum confinement and spin-orbit coupling in the valence band. The latter's particular importance is revealed in our systematic theoretical…
The magneto-electric properties of resonant tunneling double barrier structures using GaMnAs for the quantum well is investigated within a self-consistent Green's function approach and a tight-binding electronic structure model. The…
The possibility of controlling the tunneling time between quantum wells by relocation of the subband wave function within the quantum well by varying the configuration of thin tunnel-transparent barriers embedded into the well is…
A selective electrodeposition method for the fabrication of extremely thin and long metallic and magnetic wires and other nanostructures is introduced. Growth is done on the cleaved edge of a semiconductor multilayer structure incorporating…
The valley splitting of 2D electrons in doubly-gated silicon-on-insulator quantum wells is studied by low temperature transport measurements under magnetic fields. At the buried thermal-oxide SiO$_{2}$ interface, the valley splitting…
Magnetotunneling spectroscopy was employed to probe the confinement in vertical Si/Ge double-barrier resonant tunneling diodes with regularly distributed Ge quantum dots. Their current-voltage characteristics reveal a step-like behavior in…
We propose a superconducting spin-triplet valve, which consists of a superconductor and an itinerant magnetic material, with the magnet showing an intrinsic non-collinear order characterized by a wave vector that may be aligned in a few…
A device enabling mechanically-controlled spin and electric transport in mesoscopic structures is proposed. It is based on the transfer of electrons through weak links formed by suspended nanowires, on which the charge carriers experience a…
The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between…
We investigated the electron transport property of the InGaAs/GaAs double quantum dots, the electron g-factors of which are different from each other. We found that in a magnetic field, the resonant tunneling is suppressed even if one of…
The recently suggested mechanism [Y. Song and H. Dery, Phys. Rev. Lett. 113, 047205 (2014)] of the three-terminal spin transport is based on the resonant tunneling of electrons between ferromagnetic and normal electrodes via an impurity.…