Related papers: Voltage-Controlled Spin Selection in a Magnetic Re…
Spin accumulation voltages in a non-degenerate Si spin valve are discussed quantitatively as a function of electric bias current using systematic experiments and model calculations. As an open question in semiconductor spintronics, the…
Quantum interference effects in rings provide suitable means for controlling spin at mesoscopic scales. Here we apply such a control mechanism to the spin-dependent transport in a ballistic quasi one dimensional ring patterned in two…
Electron spin filter induced by Zeeman splitting in a few-electron quantum dot coupled to two normal electrodes is studied considering Coulomb blockade effect. Based on the Anderson model and Liouville-von Neumann equation, equation of…
Periodic driving of quantum dots is analyzed as a basis for developing dynamic switching devices. We study transport through periodically modulated energy levels which are coupled to leads via tunneling coefficients. Utilizing Floquet…
In this work, we investigate spin and valley transport properties of a WSe$_2$ monolayer placed on top of a ferromagnetic insulator. We are interested in controlling the transport properties by applying external potentials to the system. To…
A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…
We consider the problem of tunneling between two leads via a localized spin 1/2 or any other microscopic system which can be modeled by a two-level Hamiltonian. We assume that a constant magnetic field ${\bf B}_0$ acts on the spin, that…
We measure electron tunneling via discrete energy levels in ferromagnetic cobalt particles less than 4 nm in diameter, using non-magnetic electrodes. Due to magnetic anisotropy, the energy of each tunneling resonance shifts as an applied…
In materials lacking inversion symmetry, the spin-orbit coupling enables the direct connection between the electron's spin and its linear momentum, a phenomenon called inverse spin galvanic effect. In magnetic materials, this effect…
The magnitude of spin accumulation created in semiconductors by electrical injection of spin-polarized electrons from a ferromagnetic tunnel contact is investigated, focusing on how the spin signal detected in a Hanle measurement varies…
We report on resonant tunneling magnetoresistance via localized states through a ZnSe semiconducting barrier which can reverse the sign of the effective spin polarization of tunneling electrons. Experiments performed on Fe/ZnSe/Fe planar…
We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a…
We describe how quantum information may be transferred from photon polarization to electron spin in a semiconductor device. The transfer of quantum information relies on selection rules for optical transitions, such that two superposed…
We consider two interacting electrons in a semiconductor quantum dot structure which consists of a small dot within a larger dot, and demonstrate a singlet-triplet filtering mechanism which involves spin-dependent resonances and can…
We propose the idea of a "spinguide", i.e. the semiconductor channel which is surrounded with walls from the diluted magnetic semiconductor (DMS) with the giant Zeeman splitting which are transparent for electrons with the one spin…
We propose making light emitting diodes out of inverse spin valves. The proposed diodes rely on the spin-dependent electron transport of inverse spin valves that are layered structures of a ferromagnetic half-metal sandwiched between two…
We propose to control of an electron-hole superfluid in semiconductor coupled quantum wells and double layers of two-dimensional (2D) material by an external periodic field. This can either be created by the gates periodically located and…
Non-equilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form…
We present a theoretical model that describes electrical spin-detection at a ferromagnet/semiconductor interface. We show that the sensitivity of the spin detector has strong bias dependence which, in the general case, is dramatically…
We investigate parametric pumping of a spin-polarized current through a nearly-closed quantum dot in a perpendicular magnetic field. Pumping is achieved by tuning the tunnel couplings to the left and right lead - thereby operating the…