Related papers: Voltage-Controlled Spin Selection in a Magnetic Re…
A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. Here, using a ferromagnetic-semiconductor GaMnAs-based vertical spin MOSFET with a GaAs channel layer,…
Spin polarization of the tunnel conductivity has been studied for Fe/GaAs junctions with Schottky barriers. It is shown that band matching of resonant interface states within the Schottky barrier defines the sign of spin polarization of…
Magnetically doped semiconductors are well known for their giant Zeeman splittings which can reach several meV even in relatively small external magnetic fields. After preparing a nonequilibrium exciton distribution via optical excitation,…
We study resonant tunneling through a single-level quantum dot in the presence of strong Coulomb repulsion beyond the perturbative regime. The level is either spin-degenerate or can be split by a magnetic field. We, furthermore, discuss the…
Voltage-driven spin transfer torque in a magnetic tunnel junction comprising magnetic insulating electrodes is studied theoretically. In contrast with the conventional magnetic tunnel junctions comprising transition metal ferromagnets, the…
In this work we investigate the spin-dependent transport through a double quantum dot embedded in a ferromagnetic tunnel junction and side attached to a topological superconducting nanowire hosting Majorana zero-energy modes. We focus on…
We present measurements of resonant tunneling through discrete energy levels of a silicon double quantum dot formed in a thin silicon-on-insulator layer. In the absence of piezoelectric phonon coupling, spontaneous phonon emission with…
We study the influence of spin waves on transport through a single-level quantum dot weakly coupled to ferromagnetic electrodes with noncollinear magnetizations. Side peaks appear in the differential conductance due to emission and…
We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a large tunneling magnetoresistance (up to 30%) at low…
Spin-polarized current through an Al nanoparticle in tunnel contact with two ferromagnets is measured as a function of the direction of the applied magnetic field. The nanoparticle filters the spin of injected electrons along a direction…
Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a…
The ground state of colloidal magnetic particles in a modulated channel are investigated as function of the tilt angle of an applied magnetic field. The particles are confined by a parabolic potential in the transversal direction while in…
A single electron shared between two levels threaded by a magnetic flux is an irreducibly simple quantum system in which interference is predicted to occur. We demonstrate tuning of the tunnel coupling between two such electronic levels…
The conductance and tunnel magneto-resistance (TMR) of the double barrier magnetic tunnel junction with spin-valve sandwich (F/P/F) inserted between two insulating barrier, are theoretically investigated. It is shown, that resonant…
Research in two-dimensional (2D) materials has experienced rapid growth in the past few years. In particular, various layered compounds exhibiting quantum phenomena, such as superconductivity and magnetism, have been isolated in atomically…
We report selective injection of both spin-up and spin-down single electrons into a quantum dot (QD) from spin-polarized non-equilibrium quantum Hall edge channels (ECs) generated by selective transmission of spin-resolved ECs using a…
We introduce a new spin filter based on spin-resolved Fano resonances due to spin-split levels in a quantum ring (QR) side-coupled to a quantum wire (QW). Spin-orbit coupling inside the QR, together with external magnetic fields, induces…
Shuttling of electrons in single-molecule transistors with magnetic leads in the presence of an external magnetic field is considered theoretically. For a current of partially spin-polarized electrons a shuttle instability is predicted to…
We report experimental observation of Kondo-Fano resonant tunneling in Si-doped GaAs/AlAs multiple quantum wells. The spectrum of differential tunneling conductance at low bias shows a strong temperature dependent resonance, whose peak is…
We develop a theory of non-linear growth direction transport in magnetically doped II-VI compound semiconductor multiple-quantum-well systems. We find that the formation of electric field domains can be controlled by manipulating the space…