Related papers: Voltage-Controlled Spin Selection in a Magnetic Re…
We calculate circularly polarized luminescence emitted parallel (vertical emission) and perpendicular (edge emission) to the growth direction from a quantum well in a spin light-emitting diode (spin-LED) when either the holes or electrons…
We analyze a quantum spin Hall (QSH) device with a point contact connecting two of its edges. The contact supports a net spin tunneling current that can be probed experimentally via a two-terminal resistance measurement. We find that the…
The electron transport through the triple-barrier resonant tunnelling diode (TBRTD) have been studied by the self-consistent numerical method for the Wigner-Poisson problem. The electron flow through the TBRTD can be controlled by the gate…
We propose that a magnetic quantum wire composed of magnetic and non-magnetic atomic sites can be used as a spin filter for a wide range of applied bias voltage. We adopt a simple tight-binding Hamiltonian to describe the model where the…
Selective and large polarization of current injected into semiconductor (SC) is predicted in Ferromagnet (FM)/Quantum Dot (QD)/SC system by varying the gate voltage above the Kondo temperature. In addition, spin-dependent Kondo effect is…
We predict wide-band suppression of tunneling of spin-orbit-coupled atoms (or noninteracting Bose-Einstein condensate) in a double-well potential with periodically varying depths of the potential wells. The suppression of tunneling is…
Spin qubit systems are one of the promising candidates for quantum computing. The quantum dot (QD) arrays are intensively investigated by many researchers. Because the energy-difference between the up-spin and down-spin states is very…
We investigate coherent electron transport through a parallel circuit of two quantum dots, each of which has a single tunable energy level. Electrons tunneling via each dot from the left lead interfere with each other at the right lead. It…
We demonstrate an electric-field control of tunneling magnetoresistance (TMR) effect in a semiconductor quantum-dot (QD) spin-valve device. By using ferromagnetic Ni nano-gap electrodes, we observe the Coulomb blockade oscillations at a…
We study spin-resolved resonant tunneling in a system of two quantum dots sandwiched between doped quantum wells. In the coherent (Dicke) regime, i.e., when quantum dot separation is smaller than the Fermi wavelength in a two-dimensional…
Tunnelling conductances observed for mesoscopic Kondo systems exhibit a zero-bias peak and two coherent side peaks. The former peak is usually understood as a Kondo effect and the latter side peak is recently clarified as the effect of…
Manipulating spin polarization of electrons in nonmagnetic semiconductors by means of electric fields or optical fields is an essential theme of the conceptual nonmagnetic semiconductor-based spintronics. Here we experimentally demonstrate…
N-polar GaN/AlN resonant tunneling diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy growth. The room-temperature current-voltage characteristics reveal a negative differential…
We investigate the current-voltage characteristics of a field-effect tunnelling transistor comprised of both monolayer and bilayer graphene with well-aligned crystallographic axes, separated by three layers of hexagonal boron nitride. Using…
We predict bistability in the Curie temperature-voltage characteristic of double barrier resonant-tunneling structures with dilute ferromagnetic semiconductor quantum wells. Our conclusions are based on simulations of electrostatics and…
We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron…
Spin filtering and its back-action spin transfer torque (STT) are key ingredients of latest spintronic devices based on magnetic tunnel junctions (MTJs). Resonant tunneling (RT), implemented by design or occurring as parasitic effects, is…
Voltage control of ferromagnetism on the nanometer scale is highly appealing for the development of novel electronic devices. Here a key challenge is to implement and combine low power consumption, high operation speed, reliable…
We present two theoretical schemes for spin filters in one-dimensional semiconductor quantum wires with spatially modulated Rashba spin-orbit coupling (SOC) as well as weak magnetic potential. For case I, the SOC is periodic and the weak…
We have studied the spin-splitting effect in a four-terminal two-dimensional (2D) electron gas system with two potential barriers generated by two surface metal gates and an external perpendicular magnetic field. The calculations show that…