Magnetotunneling spectroscopy was employed to probe the confinement in vertical Si/Ge double-barrier resonant tunneling diodes with regularly distributed Ge quantum dots. Their current-voltage characteristics reveal a step-like behavior in the vicinity of zero bias, indicating resonant tunneling of heavy-holes via three-dimensionally confined unoccupied hole states in Ge quantum dots. Assuming parabolic confinement we extract the strength of the confinement potential of quantum dots.
@article{arxiv.1006.0933,
title = {Quantum confinement effects in Si/Ge heterostructures with spatially ordered arrays of self-assembled quantum dots},
author = {Oleksiy B. Agafonov and Christian Dais and Detlev Grützmacher and Rolf J. Haug},
journal= {arXiv preprint arXiv:1006.0933},
year = {2010}
}