Related papers: Shot noise in frustrated single-electron arrays
We report measurements of current noise in single- and multi-layer graphene devices. In four single-layer devices, including a p-n junction, the Fano factor remains constant to within +/-10% upon varying carrier type and density, and…
We have systematically measured the shot noise in a single electron transistor (SET) as a function of bias and gate voltages. By embedding a SET in a resonance circuit we have been able to measure its shot noise at the resonance frequency…
The shot noise of spin polarized electrons is shown to be generically dependent upon spin-flip processes. Such a situation represents perhaps the simplest instance where the two-particle character of current fluctuations out of equilibrium…
We have investigated shot noise in graphene field effect devices in the temperature range of 4.2--30 K at low frequency ($f$ = 600--850 MHz). We find that for our graphene samples with large width over length ratio $W/L$, the Fano factor…
We report first-principles calculations of shot noise properties of parallel carbon wires in the regime in which the interwire distance is much smaller than the inelastic mean free path. We find that, with increasing interwire distance, the…
The average current and the shot noise at correlated sequential tunneling via two localized sites are studied. At zero temperature the Fano factor averaged over the positions and energies of sites is shown to be 0.707. The noise dependence…
We investigate the effect of electron-phonon inelastic scattering on shot noise in nanoscale junctions in the regime of quasi-ballistic transport. We predict that when the local temperature of the junction is larger than its lowest…
We have carried out a preliminary analysis of shot noise at hopping, focusing on uniform 1D arrays of sites separated by N tunnel barriers. The results show that at low temperatures the low-frequency density of the shot noise varies from…
Shot noise is a powerful tool to probe correlations and microscopic transport details that conductance measurements alone cannot reveal. Even in atomic-scale Au devices that are well described by Landauer-B{\"u}ttiker physics, complications…
We formulate a theory for shot noise in quantum nanoelectromechanical systems. As a specific example, the theory is applied to a quantum shuttle, and the zero-frequency noise, measured by the Fano factor F, is computed. F reaches very low…
The shot noise suppression in a sample containing a layer of self-assembled InAs quantum dots has been investigated experimentally and theoretically. The observation of a non-monotonic dependence of the Fano factor on the bias voltage in a…
The shot noise of a one-dimensional wire interrupted by two barriers shows interesting features related to the interplay between Coulomb blockade effects, Luttinger correlations and discrete excitations. At small bias the Fano factor…
We investigate the noise properties of a GaAs-AlAs-GaAs tunneling structure with embedded self-assembled InAs quantum dots in the single-electron tunneling regime. We analyze the dependence of the relative noise amplitude of the shot noise…
Shot-noise measures the correlations of fluctuations of current for a voltage applied much larger than the temperature and reveals aspects of correlations in fermions beyond those revealed in the conductivity. Recent measurements of…
This is a review of shot noise, the time-dependent fluctuations in the electrical current due to the discreteness of the electron charge, in small conductors. The shot-noise power can be smaller than that of a Poisson process as a result of…
We investigate the noise properties of a GaAs/AlGaAs resonant tunneling structure at bias voltages where the current characteristic is determined by single electron tunneling. We discuss the suppression of the shot noise in the framework of…
We study a model of two interacting levels that are attached to two electronic leads, where one of the levels is attached very weakly to the leads. We use rate equations method to calculate the average current and the noise of electrons…
We study a shot noise of a wide channel gated high-frequency transistor at temperature of 4.2K near pinch-off. In this regime, a transition from the metallic to the insulating state is expected to occur, accompanied by the increase of the…
A quantum magnetic impurity of spin $S$ at the edge of a two-dimensional time reversal invariant topological insulator may give rise to backscattering. We study here the shot noise associated with the backscattering current for arbitrary…
We measure the current and shot noise in a quantum dot (QD) in the Kondo regime to address the non-equilibrium properties of the Kondo effect. By systematically tuning the temperature and gate voltages to define the level positions in the…