Shot Noise in Graphene
Mesoscale and Nanoscale Physics
2009-11-13 v3
Abstract
We report measurements of current noise in single- and multi-layer graphene devices. In four single-layer devices, including a p-n junction, the Fano factor remains constant to within +/-10% upon varying carrier type and density, and averages between 0.35 and 0.38. The Fano factor in a multi-layer device is found to decrease from a maximal value of 0.33 at the charge-neutrality point to 0.25 at high carrier density. These results are compared to theoretical predictions for shot noise in ballistic and disordered graphene.
Cite
@article{arxiv.0711.3206,
title = {Shot Noise in Graphene},
author = {L. DiCarlo and J. R. Williams and Yiming Zhang and D. T. McClure and C. M. Marcus},
journal= {arXiv preprint arXiv:0711.3206},
year = {2009}
}
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