We have investigated shot noise and conduction of graphene field effect nanoribbon devices at low temperature. By analyzing the exponential I−V characteristics of our devices in the transport gap region, we found out that transport follows variable range hopping laws at intermediate bias voltages 1<Vbias<12 mV. In parallel, we observe a strong shot noise suppression leading to very low Fano factors. The strong suppression of shot noise is consistent with inelastic hopping, in crossover from one- to two-dimensional regime, indicating that the localization length lloc<W in our nanoribbons.
@article{arxiv.1005.4403,
title = {Shot Noise Suppression and Hopping Conduction in Graphene Nanoribbons},
author = {R. Danneau and F. Wu and M. Y. Tomi and J. B. Oostinga and A. F. Morpurgo and P. J. Hakonen},
journal= {arXiv preprint arXiv:1005.4403},
year = {2015}
}