Related papers: Spin-Lattice Relaxation in Si Quantum Dots
Traditional approaches to controlling single spins in quantum dots require the generation of large electromagnetic fields to drive many Rabi oscillations within the spin coherence time. We demonstrate "flopping-mode" electric dipole spin…
We present a study of the magnetic order and the structural stability of two-dimensional quantum spin systems in the presence of spin-lattice coupling. For a square lattice it is shown that the plaquette formation is the most favourable…
Carrier relaxation due to both optical and nonradiative intraband transitions in silicon quantum dots in SiO$_2$ has been considered. Interaction of confined holes with optical phonons has been studied. The Huang-Rhys factor is calculated…
We theoretically study the $(1,1)$ triplet to $(0,2)$ singlet relaxation rate in a lateral gate-defined double quantum dot tuned to the regime of Pauli spin blockade. We present a detailed derivation of the effective phonon density of…
A formula for the electron spin relaxation rate of an electron-phonon system is derived using a new spring-loop diagram method. The result contains the distribution functions for the electrons and phonons properly. Therefore, all the spin…
Spin relaxation in undoped quasi-spherical CdS quantum dots at zero magnetic fields is investigated using time- and polarization-resolved transient absorption measurements. Unlike in previous studies of these systems, the measured signals…
Although silicon is a promising material for quantum computation, the degeneracy of the conduction band minima (valleys) must be lifted with a splitting sufficient to ensure formation of well-defined and long-lived spin qubits. Here we…
Among recent proposals for next-generation, non-charge-based logic is the notion that a single electron can be trapped and its spin can be manipulated through the application of gate potentials. In this paper, we present numerical…
We show that the spin-lattice relaxation in n-type insulating GaAs is dramatically accelerated at low magnetic fields. The origin of this effect, that cannot be explained in terms of well-known diffusion-limited hyperfine relaxation, is…
We investigate the wave functions, spectrum, and g-factor anisotropy of low-energy electrons confined to self-assembled, pyramidal InAs quantum dots (QDs) subject to external magnetic and electric fields. We present the construction of…
Photoinduced circular dichroism experiments in an oblique magnetic field allow measurements of Larmor precession frequencies, and so give a precise determination of the electron Lande g factor and its anisotropy in self-assembled InAs/GaAs…
We develop a valley-dependent envelope function theory that can describe the effects of arbitrary configurations of interface steps and miscuts on the qubit relaxation time. For a given interface roughness, we show how our theory can be…
We investigate relaxation and dephasing of an electron spin confined in a semiconductor quantum dot and subject to spin-orbit coupling. Even in vanishing magnetic field, B = 0, slow noise coupling to the electron's orbital degree of freedom…
We present numerical results for electron spin relaxation rates for single and laterally coupled double GaAs quantum dots in a perpendicular magnetic field. As source of spin relaxation we consider hyperfine interaction with the nuclear…
A theory of electron spin relaxation in semiconducting carbon nanotubes is developed based on the hyperfine interaction with disordered nuclei spins I=1/2 of $^{13}$C isotopes. It is shown that strong radial confinement of electrons…
Electron localization in the Si/Ge heterosystem with Si quantum dots (QDs) was studied by transport and electron spin resonance (ESR) measurements. For Si QD structures grown on Ge(111) substrates, the ESR signal with g-factor…
An electron spin qubit in silicon quantum dots holds promise for quantum information processing due to the scalability and long coherence. An essential ingredient to recent progress is the employment of micromagnets. They generate a…
Influence of resonant oscillating electromagnetic field on a single electron in coupled lateral quantum dots in the presence of phonon-induced relaxation and decoherence is investigated. Using symmetry arguments it is shown that spin and…
Color centers in diamond are a promising platform for quantum technologies, and understanding their interactions with the environment is crucial for these applications. We report a study of spin- lattice relaxation (T1) of the neutral…
Spin relaxation due to the D'yakonov-Perel' mechanism is intimately related with the spin splitting of the electronic states. We determine the spin relaxation rates from anisotropic spin splittings of electron subbands in n-(001)…