Related papers: Spin-Lattice Relaxation in Si Quantum Dots
We study the electric-dipole transitions for a single electron in a double quantum dot located in a semiconductor nanowire. Enabled by spin-orbit coupling (SOC), electric-dipole spin resonance (EDSR) for such an electron can be generated…
We report electronic control and measurement of an imbalance between spin-up and spin-down electrons in micron-scale open quantum dots. Spin injection and detection was achieved with quantum point contacts tuned to have spin-selective…
We investigate several spin-related phenomena in a confined two-dimensional electron gas (2DEG) using the Hartree-Fock approximation for the mutual Coulomb interaction of the electrons. The exchange term of the interaction causes a large…
We suggest an approach to the problem of free electron spin evolution in a semiconductor with arbitrary anisotropy or quantum structure in a magnetic field. The developed approach utilizes quantum kinetic equations for average spin…
The role of the polarization degree of freedom in lattice dynamics in solids has been underlined recently. We theoretically discover a relaxation mechanism for both linear and circular polarizations of acoustic phonons. In the absence of…
We study the relaxation of a single electron spin in a circular quantum dot in a transition-metal dichalcogenide monolayer defined by electrostatic gating. Transition-metal dichalcogenides provide an interesting and promising arena for…
We report on measurements of the spin relaxation time T1 of individual electron spins in the few electron regime of a Si/SiO2-based quantum dot (QD). Energy-spectroscopy of the QD has been performed using a charge sensing technique. The…
Spin-phonon relaxation due to two-phonon processes of a spin cluster embedded in an elastic medium has been studied. For the case of uniaxial anisotropy, relaxation rates due to Raman processes and processes involving the emission of two…
We theoretically model the spin-orbit interaction in silicon quantum dot devices, relevant for quantum computation and spintronics. Our model is based on a modified effective mass approach with spin-valley boundary conditions, derived from…
We study two-electron singlet-triplet relaxation of donor-bound electrons in Silicon. Hyperfine interaction of the electrons with the phosphorus (P) nuclei, in combination with the electron-phonon interaction, lead to relaxation of the…
The relaxation of electrons in quantum dots via phonon emission is hindered by the discrete nature of the dot levels (phonon bottleneck). In order to clarify the issue theoretically we consider a system of $N$ discrete fermionic states (dot…
The spin of a confined electron, when oriented originally in some direction, will lose memory of that orientation after some time. Physical mechanisms leading to this relaxation of spin memory typically involve either coupling of the…
Exciton spin relaxation is investigated in single epitaxially grown semiconductor quantum dots in order to test the expected spin relaxation quenching in this system. We study the polarization anisotropy of the photoluminescence signal…
We study theoretically phonon-induced spin dynamics of two electrons confined in a self-assembled double quantum dot. We calculate the transition rates and time evolution of occupations for the spin-triplet and spin-singlet states. We…
We study the relaxation of the exciton spin (longitudinal relaxation time $T_{1}$) in single asymmetrical quantum dots due to an interplay of the short--range exchange interaction and acoustic phonon deformation. The calculated relaxation…
We have studied the electron spin coherence in an ensemble of positively charged InAs/GaAs quantum dots. In a transverse magnetic field, we show that two main contributions must be taken into account to explain the damping of the circular…
The mechanisms for spin relaxation in semiconductors are reviewed, and the mechanism prevalent in p-doped semiconductors, namely spin relaxation due to the electron-hole exchange interaction, is presented in some depth. It is shown that the…
Theory of the electron spin relaxation in graphene on the SiO$_2$ substrate is developed. Charged impurities and polar optical surface phonons in the substrate induce an effective random Bychkov-Rashba-like spin-orbit coupling field which…
We analyze the electron spin relaxation rate $1/T_1$ of individual ion-implanted $^{31}$P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar…
From spin resonance of two-dimensional (2D) conduction electrons in a modulation doped SiGe/Si/SiGe quantum well structure we find a 2D anisotropy of both the line broadening (dephasing time) and the g-factor. We show that these can be…