Related papers: Spin-Lattice Relaxation in Si Quantum Dots
We report a pulsed EPR study of the phase relaxation of electron spins bound to phosphorus donors in isotopically purified 29^Si and natural abundance Si single crystals measured at 8 K.
We demonstrate by spin quantum beat spectroscopy that in undoped symmetric (110)-oriented GaAs/AlGaAs single quantum wells even a symmetric spatial envelope wavefunction gives rise to an asymmetric in-plane electron Land\'e-g-factor. The…
Low-energy electrons scattered in the conduction band of a dielectric solid should behave like Bloch electrons and will interact with perturbations of the atomic lattice, i.e. with phonons. Thus the phonon-based description of low-energy…
Spin-orbit coupling (SOC) is a relativistic effect, where an electron moving in an electric field experiences an effective magnetic field in its rest frame. In crystals without inversion symmetry, it lifts the spin degeneracy and leads to…
Silicene systems, due to the buckled structure of the lattice, manifest remarkable intrinsic spin-orbit interaction triggering a topological phase transition in the low-energy regime. Thus, we found that protected edge states are present in…
We investigate effects of spin-orbit splitting on electronic transport in a spin valve consisting of a large quantum dot defined on a two-dimensional electron gas with two ferromagnetic contacts. In the presence of both structure inversion…
We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We…
Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based…
We present a theoretical analysis of the phonon-assisted relaxation in a system composed of two self-assembled vertically stacked quantum dots. We construct realistic model, which takes into account the geometry and strain distribution in…
We consider a mechanism of spin decay for an electron spin in a quantum dot due to coupling to a nearby quantum point contact (QPC) with and without an applied bias voltage. The coupling of spin to charge is induced by the spin-orbit…
Spin related phenomena in quantum nanostructures have attracted recently much interest due to fast growing field of spintronics. In particular complex nanostructures are important as they provide a versatile system to manipulate spin and…
Effect of electric field on spin splitting in SiGe quantum wells (QWs) has been studied theoretically. Microscopical calculations of valley and spin splittings are performed in the effective $sp^3d^5s^*$ tight-binding model. The splittings…
Gate geometry and bias asymmetry can be used to engineer spin dynamics in gate-defined Ge hole quantum dots by reshaping the confinement potential and driving transitions between distinct confinement regimes. In this work, we show that…
Spin transport experiments in graphene, a single layer of carbon atoms, indicate spin relaxation times that are significantly shorter than the theoretical predictions. We investigate experimentally whether these short spin relaxation times…
In the "flopping-mode" regime of electron spin resonance, a single electron confined in a double quantum dot is electrically driven in the presence of a magnetic field gradient. The increased dipole moment of the charge in the flopping mode…
The main obstacle to coherent control of two-level quantum systems is their coupling to an uncontrolled environment. For electron spins in III-V quantum dots, the random environment is mostly given by the nuclear spins in the quantum dot…
A quantum mechanical close coupling theory of spin relaxation in the stretched hyperfine level of sodium is presented. We calculate the dipolar relaxation rate of magnetically trapped cold sodium atoms in the magnetic field. The influence…
This study examines the spin-lattice relaxation rate of Mn$^{2+}$ ions in strained diluted magnetic semiconductor (Cd,Mn)Te/(Cd,Mg)Te quantum wells using the optically detected magnetic resonance (ODMR) technique. By adjusting the magnesium…
We consider the problem of spin relaxation in a two-dimensional electron gas (2DEG) in a perpendicular magnetic field. We assume that the spin relaxation is induced by the Rashba spin-orbit (SO) interaction, which appears due to the…
Employing the spin-wave formalism within and beyond the harmonic-oscillator approximation, we study the dynamic structure factors of spin-$\frac{1}{2}$ nearest-neighbor quantum Heisenberg antiferromagnets on two-dimensional quasiperiodic…