Effect of electric field on spin splitting in SiGe quantum wells (QWs) has been studied theoretically. Microscopical calculations of valley and spin splittings are performed in the effective sp3d5s∗ tight-binding model. The splittings oscillate as a function of the QW width due to inter-valley reflection of the electron wave off the interfaces. In accordance with the symmetry considerations additional electric-field-induced terms appear in the electron spin-dependent Hamiltonian. The oscillations of splitting are suppressed in rather low electric fields. The tight-binding calculations have been analyzed by using the envelope function approach extended to asymmetrical QWs.
@article{arxiv.0712.1955,
title = {Electric field effect on electron spin splitting in SiGe/Si quantum wells},
author = {M. O. Nestoklon and E. L. Ivchenko and J. -M. Jancu and P. Voisin},
journal= {arXiv preprint arXiv:0712.1955},
year = {2008}
}