Electron-electron scattering effect on spin relaxation in multi-valley nanostructures
Mesoscale and Nanoscale Physics
2009-10-06 v2 Other Condensed Matter
Abstract
We develop a theory of effects of electron-electron collisions on the Dyakonov-Perel' spin relaxation in multi-valley quantum wells. It is shown that the electron-electron scattering rate which governs the spin relaxation is different from that in a single-valley system. The theory is applied to Si/SiGe (001)-grown quantum wells where two valleys are simultaneously populated by free carriers. The dependences of the spin relaxation rate on temperature, electron concentration and valley-orbit splitting are calculated and discussed. We demonstrate that in a wide range of temperatures the electron-electron collisions can govern spin relaxation in high-quality Si/SiGe quantum wells.
Cite
@article{arxiv.0905.4393,
title = {Electron-electron scattering effect on spin relaxation in multi-valley nanostructures},
author = {M. M. Glazov and E. L. Ivchenko},
journal= {arXiv preprint arXiv:0905.4393},
year = {2009}
}
Comments
6 pages, 4 figures, EPL style, revised version